Substrate Processing Gas Supply Valve Pressure Control

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Solution Overview

Problem

Conventional fluid control systems for substrate processing independently control pressure and flow rate, leading to increased system size and cost, and insufficient supply of raw material gas at high flow rates in short periods, particularly in film forming applications like ALD.

Innovation Solution

A substrate processing apparatus with a control valve that adjusts the opening degree to maintain a constant internal pressure in the process container, using a gas storage tank and mass flow controller to regulate the flow rate of gas supplied, ensuring a large amount of gas is delivered in a short time while maintaining a constant flow rate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If pressure and flow rate are controlled independently using separate controllers, then pressure control stability is improved, but system complexity and cost increase

Engineering Contradiction:
Improvepressure control stabilityVSAvoidsystem complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the pressure controller and flow rate controller into a single integrated controller that manages both functions. The controller simultaneously regulates the proportional valve for pressure control and the throttle valve for flow rate control, eliminating the need for separate independent controllers while maintaining effective pressure and flow rate management through unified control logic.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The integrated controller performs multiple functions: it controls both pressure and flow rate, manages valve operations, and coordinates gas supply from the storage tank to the reaction chamber. This multi-functional controller replaces what would traditionally require separate specialized controllers, reducing system complexity while maintaining comprehensive control capabilities.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Device complexity

If a flow rate regulating valve is used without real-time opening degree control, then device complexity is reduced, but flow rate control precision deteriorates

Engineering Contradiction:
Improvevalve control complexityVSAvoidflow rate control precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The patent implements feedback control for the flow rate regulating valve by installing a flowmeter that continuously measures the actual flow rate of raw material gas. The integrated controller receives this feedback signal and adjusts the throttle valve opening degree in real-time to maintain the desired flow rate, ensuring precise flow rate control while coordinating with pressure control requirements.

Inventive Principle:
Principle #23Feedback

3Productivity

If a large amount of raw material gas is supplied in a short period, then productivity is improved, but flow rate control stability deteriorates

Engineering Contradiction:
Improvegas supply speedVSAvoidflow rate control stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent prepares a large amount of raw material gas in advance by storing it in a pressurized storage tank before the film formation process. This preliminary accumulation allows the system to supply large amounts of gas quickly when needed without compromising flow rate control stability, as the stored gas can be delivered at controlled rates while meeting high productivity requirements.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables efficient and uniform gas supply at high flow rates in short periods, enhancing film formation processes by maintaining constant pressure and flow rate, thereby improving inter-plane and in-plane uniformity during ALD-based film formation.

Implementation Method 1

a control valve (30) installed in the first gas supply pipe (20) and controlling the internal pressure of the process container (10) by changing an opening degree of the control valve (30)

Methodology Applied
Scientific EffectPressure control: Pressure Gradient

Implementation Method 2

a pressure detection part (81) configured to measure an internal pressure of the process container (10)

Methodology Applied
Scientific EffectPressure detection: Pressure-sensitive Paint

Implementation Method 3

a tank installed in the middle of the raw material gas supply path and that stores the raw material gas with an increased pressure

Methodology Applied
Scientific EffectPressure storage: Pressure Increase

Data Source

PatentUS10287682B2Substrate processing apparatus, gas supply method, substrate processing method, and film forming method
Publication Date: 2019.05.14 TOKYO ELECTRON LTD
  • US10287682B2 patent drawing
  • US10287682B2 patent drawing
  • US10287682B2 patent drawing

AI summary

A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.