Substrate Heating Apparatus with Heat Shielding for Mask Formation
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Solution Overview
Problem
The plasma-dicing process for semiconductor substrates faces challenges with substrate warpage, cracking, and reduced production yield due to the use of thermoplastic holding sheets with low heat tolerance, which deform during mask formation and plasma processing, affecting patterning accuracy and cooling efficiency.
Innovation Solution
A manufacturing process involving a substrate heating apparatus with a heat shielding member that maintains the holding sheet at a lower temperature while heating the substrate to form a resin layer, allowing for precise patterning and plasma etching without deforming the holding sheet, thereby improving yield and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the substrate is adhered on the holding sheet before mask formation, then substrate handling stability is improved, but holding sheet deformation occurs due to heat exposure during mask formation
Solution Approach 1:
The heating process is segmented into two distinct phases: (1) substrate heating phase where the substrate is heated to high temperature for mask formation while the holding sheet is protected from excessive heat, and (2) cooling phase where both substrate and holding sheet are cooled together. This temporal segmentation allows the substrate to receive necessary heat treatment while preventing holding sheet deformation.
Solution Approach 2:
A heat-resistant intermediate layer or protective structure is introduced between the heat source and the holding sheet during the heating process. This intermediary element allows heat to reach the substrate for mask formation while blocking or dissipating excessive heat that would cause holding sheet deformation, thus protecting the holding sheet's structural integrity.
2Manufacturing precision
If the substrate is heated to high temperature for mask formation, then mask patterning accuracy is improved, but holding sheet deformation occurs preventing flat configuration
Solution Approach 1:
The thermal processing is segmented into a heating stage where the substrate is heated to high temperature for accurate mask patterning, followed by a controlled cooling stage where the holding sheet is cooled to maintain its flat configuration. This temporal separation enables high-precision patterning while preserving holding sheet flatness.
Solution Approach 2:
The temperature parameters are dynamically changed during the process: the substrate temperature is raised to high values (e.g., 90-110°C) during mask formation to ensure accurate patterning, then the temperature is reduced during the cooling phase to prevent holding sheet deformation and maintain flat configuration for subsequent plasma processing.
3Reliability
If the holding sheet is cooled insufficiently during plasma processing, then production yield is reduced, but excessive cooling may cause thermal stress
Solution Approach 1:
The cooling process is implemented as a periodic or controlled action rather than immediate intense cooling. After high-temperature mask formation, the substrate and holding sheet are cooled at a controlled rate to a intermediate temperature, then held at this temperature during plasma processing. This periodic thermal management ensures adequate cooling to prevent deformation and maintain production yield while avoiding excessive thermal stress that would occur with rapid quenching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process enhances the production yield of element chips by maintaining the holding sheet's integrity and preventing deformation, ensuring accurate patterning and efficient plasma etching, thus improving the overall manufacturing efficiency.
Implementation Method 1
a heating step for providing a heat from a heat source to the substrate held on the holding sheet through a heat shielding member which shields the frame and the holding sheet from the heat
Implementation Method 2
a heat shielding member which shields the frame and the holding sheet from the heat
Implementation Method 3
a dicing step for dicing the substrate into a plurality of element chips by plasma-etching the substrate from the first surface through the second surface
Data Source
AI summary
Provided is a manufacturing process of an element chip, which comprises a preparing step for preparing a substrate containing element regions and dicing regions, a holding step for holding the substrate and a frame with a holding sheet, an applicating step for applying a resin material solution containing a resin constituent and a solvent on the substrate to form a coated layer containing the resin constituent and the solvent thereon, a heating step for heating the substrate held on the holding sheet through a heat shielding member shielding the frame and the holding sheet to substantially remove the solvent from the coated layer, thereby to form a resin layer, a patterning step for patterning the resin layer to expose the substrate in the dicing regions, and a dicing step for dicing the substrate into element chips by plasma-etching the substrate.