Substrate Heating Sequence for Backside Organic Residue Removal
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Solution Overview
Problem
The existing substrate processing methods face challenges in efficiently removing organic material deposited on the back surface of a substrate, which can lead to particle generation and unstable substrate positioning during subsequent processes, affecting temperature distribution and film thickness uniformity.
Innovation Solution
A substrate processing method involving a heating process, depositing process, and removing process, where the substrate is heated to a first temperature for deposition, then held at a second temperature higher than the first to remove organic material from the periphery and back surface, utilizing a multi-chamber vacuum processing system with specific apparatus configurations to manage temperature and gas flow effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the substrate is heated to remove organic material from the back surface, then the organic material removal efficiency is improved, but the substrate positioning stability deteriorates
Solution Approach 1:
The substrate positioning system transitions from a static contact state to a dynamic spaced-apart state during the heating process. By lifting the substrate away from the stage using positioning pins, the system dynamically adjusts the substrate-positioning relationship to enable effective back surface heating while maintaining controlled positioning through the pins.
2Manufacturing precision
If organic material is deposited on the substrate by heating, then the film deposition is achieved, but organic material accumulates on the back surface causing particle generation
Solution Approach 1:
The substrate processing is segmented into distinct phases: deposition phase where the substrate contacts the stage for optimal film formation, and removal phase where the substrate is spaced apart from the stage to prevent back surface contamination. This temporal and spatial segmentation allows each phase to optimize its function without interfering with the other.
Solution Approach 2:
The substrate-positioning state dynamically changes between contact and spaced-apart configurations. During deposition, contact positioning ensures uniform film formation. During heating/removal, spaced-apart positioning prevents organic material accumulation on the back surface, thereby eliminating particle generation sources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach efficiently removes organic material from the back surface of the substrate, improving substrate stability and uniformity of the deposited film thickness, while forming an air gap in the substrate.
Implementation Method 1
a thermally decomposable organic material is deposited on a front surface of the substrate by supplying a material gas into the container
Implementation Method 2
a thermally decomposable organic material is deposited on a front surface of the substrate by supplying a material gas into the container
Implementation Method 3
the organic material deposited on a periphery of the recess and a back surface of the substrate, which is opposite to the one surface of the substrate, is removed by holding the substrate at a position spaced apart from the stage and heating the substrate to a second temperature higher than the first temperature
Data Source
AI summary
A substrate processing method includes: a heating process of heating a substrate, which is placed on a stage disposed in a container and has a recess formed on one surface of the substrate, to a first temperature; a depositing process of depositing a thermally decomposable organic material on a front surface of the substrate by supplying a material gas into the container; and a removing process of removing the organic material deposited on a periphery of the recess and a back surface of the substrate, which is opposite to the one surface of the substrate, by holding the substrate at a position spaced apart from the stage and heating the substrate to a second temperature higher than the first temperature.