Substrate Heating Device with Branch Flow Path
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Solution Overview
Problem
In semiconductor device manufacturing, the heating of the outer peripheral portion of a substrate during processing leads to non-uniformity due to temperature loss of the processing liquid, and temporarily stopping heating to prevent IPA volatilization results in decreased throughput as it takes time for the gas to reheat.
Innovation Solution
A substrate processing apparatus with a heating device that includes a discharge flow path for the outer peripheral portion and a branch flow path for other regions, allowing continuous heating optimization by switching gas supply between these paths, maintaining efficient heating without overheating or waiting for reheat.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-temperature gas is continuously discharged to the outer peripheral portion of the substrate, then temperature uniformity of the substrate is improved, but IPA volatilization occurs during substitution processing
Solution Approach 1:
The gas discharge system is segmented into multiple independent nozzles positioned at different locations (central portion and outer peripheral portion). This allows selective discharge of high-temperature gas to different regions based on processing requirements, enabling temperature uniformity maintenance without causing IPA volatilization during substitution processing.
Solution Approach 2:
The gas discharge system dynamically adjusts the discharge state based on processing conditions. During etching processing, high-temperature gas is discharged to the outer peripheral portion to maintain temperature uniformity. During substitution processing with IPA, the discharge to the outer peripheral portion is stopped or reduced to prevent IPA volatilization, while the system remains ready to quickly resume when needed.
2Object-generated harmful factors
If discharge of high-temperature gas is stopped to prevent IPA volatilization, then IPA substitution is improved, but throughput decreases due to reheating time
Solution Approach 1:
The gas discharge system is pre-positioned and pre-configured during etching processing, maintaining readiness state. When substitution processing begins, the system can quickly stop or reduce discharge to the outer peripheral portion without requiring full shutdown and restart sequences, enabling faster transition and reducing downtime between processing types.
Solution Approach 2:
The gas discharge operates in periodic cycles, alternating between high-temperature discharge during etching processing and reduced/stopped discharge during substitution processing. This periodic operation pattern allows the system to optimize for each processing type while minimizing transition time, maintaining high overall throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures uniform heating of the substrate, prevents IPA volatilization during substitution processing, and maintains high throughput by continuous heating optimization without stopping the heating process.
Implementation Method 1
the temperature of the processing liquid is decreased due to thermal conduction to the substrate
Implementation Method 2
volatilization of the IPA is promoted by heating
Data Source
AI summary
A heating processing performed on an outer peripheral portion of a substrate can be optimized. A substrate processing apparatus includes a holding unit configured to hold a substrate; a rotation unit configured to rotate the holding unit; a processing liquid supply unit configured to supply a processing liquid onto the substrate held in the holding unit; and a heating device configured to heat an outer peripheral portion of the substrate held in the holding unit. Further, the heating device includes a discharge flow path through which a gas is discharged toward the outer peripheral portion of the substrate held in the holding unit; a branch flow path through which a gas is discharged toward a region other than the substrate held in the holding unit; and a heating unit configured to heat the discharge flow path and the branch flow path.