Substrate Heating Unit Evaporates Impurities in Concave Patterns

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Solution Overview

Problem

Existing substrate processing methods fail to effectively remove impurities along with sublimable substances from substrates with concavo-convex patterns, as impurities remain on the substrate even when heated above the sublimation temperature of the sublimable substance.

Innovation Solution

A substrate processing apparatus and method that heats the substrate to a temperature higher than the sublimation point of both the sublimable substance and the impurity, using a processing unit with a heating and exhaust system to evaporate and discharge the impurities, ensuring complete removal of both the sublimable substance and impurities from the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If the substrate is heated at a temperature higher than the sublimation temperature of the sublimable substance to remove the sublimable substance, then the sublimable substance is removed from the substrate, but impurities remain on the substrate without being evaporated

Engineering Contradiction:
Improveremoval of sublimable substanceVSAvoidimpurity remaining on substrate
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent changes the temperature parameter from the sublimation temperature range (100-300°C) to a higher temperature range (300-500°C) to enable evaporation of impurities. This parameter change transforms the removal mechanism from sublimation-only to evaporation-based, allowing complete removal of both sublimable substances and impurities.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies a preliminary action by heating the substrate to a temperature sufficient to evaporate impurities before the impurities can remain on the substrate. This preliminary high-temperature treatment ensures that impurities are removed in advance, preventing them from contaminating the final substrate surface.

Inventive Principle:
Principle #10Preliminary action

2Productivity

If the substrate is heated at a temperature of 100°C to 300°C to sublime the sublimable substance, then the sublimable substance is removed, but impurities with higher evaporation temperatures remain on the substrate

Engineering Contradiction:
Improvesublimation rateVSAvoidcomplete removal of contaminants
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent changes the temperature parameter from the sublimation temperature range (100-300°C) to a higher temperature range (300-500°C). This parameter change enables the system to remove both sublimable substances and impurities, achieving complete contaminant removal while maintaining efficient processing.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent applies excessive action by heating the substrate to a temperature higher than the minimum required for sublimation. This excessive heating (300-500°C) ensures that not only sublimable substances but also impurities with higher evaporation temperatures are completely removed, achieving reliable contaminant removal.

Inventive Principle:
Principle #16Partial or excessive action

3Reliability

If the substrate is heated to a temperature equal to or higher than the second temperature, then both the sublimable substance and impurity are evaporated and removed, but energy consumption increases

Engineering Contradiction:
Improvecomplete removal of impurityVSAvoidenergy consumption for heating
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies continuous useful action by maintaining the substrate at a temperature equal to or higher than the second temperature for a sufficient period to ensure complete evaporation and removal of impurities. This continuous high-temperature treatment guarantees reliable contaminant removal while optimizing energy utilization.

Inventive Principle:
Principle #20Continuity of useful action

Solution Approach 2:

The patent changes the temperature parameter to a higher range (300-500°C) that enables simultaneous evaporation of both sublimable substances and impurities. Although this increases energy consumption, it achieves complete contaminant removal in a single step, potentially reducing total processing time and energy usage compared to multi-step processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the thorough removal of sublimable substances and impurities from the substrate, preventing reattachment and ensuring a clean surface, even when the impurities have higher evaporation temperatures than the sublimation temperature of the sublimable substance.

Implementation Method 1

the impurity that evaporates at a temperature equal to or higher than a second temperature (T2)

Methodology Applied
Scientific EffectEvaporation: Evaporation

Implementation Method 2

a sublimable substance that sublimates at a temperature equal to or higher than a first temperature (T1)

Methodology Applied
Scientific EffectSublimation: Sublimation

Data Source

PatentUS10121646B2Substrate processing apparatus and substrate processing method
Publication Date: 2018.11.06 TOKYO ELECTRON LTD
  • US10121646B2 patent drawing
  • US10121646B2 patent drawing
  • US10121646B2 patent drawing

AI summary

In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.