Large-Diameter Substrate Heating Layout for Uniform Surface Temperature
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional semiconductor substrate manufacturing devices fail to uniformly heat large-diameter substrates, resulting in inadequate heat treatment of the central portion.
Innovation Solution
A device with a heating furnace that includes a heating source positioned intersecting with the substrate's main surface, featuring a heat equalizing range and multiple heating sources arranged to ensure uniform heating, along with a main container made of material containing the substrate's atomic species, allowing for efficient heat distribution and maintaining a vapor pressure environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heater is arranged on the side wall to surround the periphery of the substrate, then the device structure is simple, but the central portion of large-diameter substrates is not sufficiently heated
Solution Approach 1:
The heating source is moved from the side wall (horizontal arrangement) to the top surface (vertical arrangement), changing the spatial dimension of heating. This allows heat to be applied from above, enabling uniform heating across the entire substrate surface including the central portion, while maintaining a relatively simple device structure.
2Temperature
If the heating source area is increased to cover the entire substrate, then heating uniformity improves, but the device complexity increases
Solution Approach 1:
The top surface heating source serves multiple functions: it provides uniform heating across the entire substrate area, maintains temperature distribution, and can be integrated with the reaction chamber structure. This multi-functionality reduces the need for additional specialized heating components.
3Temperature
If multiple heating sources are arranged facing each other, then heating uniformity and temperature gradient control improve, but the device complexity increases
Solution Approach 1:
Different heating sources are positioned to provide different heating characteristics: one heating source provides primary heating while the other creates a temperature gradient. This local differentiation of heating quality enables precise control over temperature distribution and gradient formation without requiring complex heating systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables uniform heating of large-diameter semiconductor substrates, ensuring effective heat treatment and growth or etching processes without separate raw material accommodation, while maintaining a controlled environment.
Implementation Method 1
a heating source in a direction intersecting with a main surface of the semiconductor substrate to be arranged in the heating chamber
Implementation Method 2
the heating source has a heat equalizing range for uniformly heating the main surface of the semiconductor substrate
Implementation Method 3
the heating furnace can perform heating in a manner to form a temperature gradient in a substantially vertical direction to the semiconductor substrate
Data Source
AI summary
Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.