Substrate Heating via Susceptor and Plasma Hydrogen
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Solution Overview
Problem
Current microwave heat treatment for semiconductor substrates faces challenges in achieving uniform heating due to variations in material composition, making it difficult to process high-density substrates with complex patterns.
Innovation Solution
A substrate processing apparatus that uses electromagnetic waves in conjunction with a hydrogen-containing gas and plasma to modify the substrate, incorporating a controller to manage the heating device, gas supply, and plasma generator for uniform heating and hydrogen atom addition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If microwave heat treatment is used to modify high-density substrates, then processing capability for high-density substrates is improved, but uniformity of heating is deteriorated
Solution Approach 1:
A susceptor is introduced as an intermediary substance between the microwave field and the substrate. The susceptor absorbs microwave energy and converts it to heat, which is then transferred to the substrate. This mediator approach allows the substrate to be heated uniformly without direct microwave exposure, solving the non-uniform heating problem while maintaining processing capability.
Solution Approach 2:
The patent replaces direct microwave heating (electromagnetic field action) with a thermal conduction-based heating system using a susceptor. By substituting the electromagnetic heating mechanism with a thermal conduction mechanism through contact with the susceptor, uniform heat distribution is achieved across the substrate surface.
2Adaptability or versatility
If material composition varies in the substrate or film, then adaptability to different materials is improved, but uniformity of heating by microwaves is deteriorated
Solution Approach 1:
The susceptor acts as a universal intermediary that can be placed in contact with various substrate materials regardless of their composition. It uniformly absorbs microwave energy and transfers heat through thermal conduction, making the heating process independent of the substrate's material composition and enabling consistent processing across different materials.
Solution Approach 2:
The patent changes the heating mechanism from direct electromagnetic absorption (which depends on material composition) to thermal conduction through a susceptor. By changing the heating parameter from microwave-direct to contact-thermal, the process becomes adaptable to various materials while maintaining uniformity.
3Manufacturing precision
If intermittent microwave supply is used to heat the substrate, then uniformity of heating is improved, but processing time is increased
Solution Approach 1:
The patent employs periodic (intermittent) microwave supply combined with substrate rotation. The microwave is supplied in cycles, allowing heat to distribute uniformly during off-periods and be replenished during on-periods. This periodic action, combined with rotation, achieves uniform heating while maintaining reasonable processing time.
Solution Approach 2:
The substrate is rotated during the heating process, introducing dynamic motion to the otherwise static heating system. This rotation ensures all areas of the substrate receive equivalent heat exposure over time, achieving uniformity without requiring excessively long processing times.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and uniform heating of substrates, improving electromagnetic wave absorption and reducing wet etch rates, thereby enhancing processing efficiency and throughput while maintaining film properties.
Implementation Method 1
a plasma generator configured to excite the hydrogen-containing gas by plasma
Implementation Method 2
a heating device configured to heat the substrate by electromagnetic waves
Data Source
AI summary
Described herein is a technique capable of heating a substrate uniformly by electromagnetic waves. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a heating device configured to heat the substrate by electromagnetic waves; a gas supply mechanism including a hydrogen-containing gas supply system configured to supply a hydrogen-containing gas into the process chamber; a plasma generator configured to excite the hydrogen-containing gas by plasma; and a controller configured to control the heating device, the gas supply mechanism and the plasma generator to modify the substrate by performing: (a) adding hydrogen atom to a surface of the substrate by supplying the hydrogen-containing gas excited by the plasma generator onto the substrate; and (b) intermittently supplying the electromagnetic waves to heat the substrate after performing (a).