Substrate Heating Height Control for In-Chamber Etch and Anneal
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Solution Overview
Problem
Existing substrate processing systems lack the capability to efficiently perform multiple sequential processes such as etching and annealing within a single chamber without requiring substrate removal.
Innovation Solution
A substrate processing apparatus with a chamber, heater, and a lift pin that moves vertically to adjust substrate position relative to the heater, combined with a plasma source and gas supply members, allowing for sequential etching and annealing processes to be performed within the same chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple sequential processes (etching and annealing) are performed in a single chamber, then process efficiency is improved and handling steps are reduced, but device complexity increases due to the need for multiple process modules (plasma source, heater, gas supply members)
Solution Approach 1:
The patent combines multiple process modules (plasma source, heater, gas supply members) within a single chamber to perform both etching and annealing processes. This merging of functions into one integrated system allows sequential processing without substrate removal, improving productivity while managing device complexity through unified design.
Solution Approach 2:
The chamber is designed as a multi-functional system that can perform different processes (etching and annealing) using different process gases and control conditions. The same physical chamber and substrate support structure serve multiple purposes by varying the gas composition and heating parameters, enhancing productivity without proportionally increasing device complexity.
2Manufacturing precision
If the lift pin moves the substrate vertically to adjust position relative to the heater, then temperature control precision is improved, but device complexity increases due to the movable support mechanism
Solution Approach 1:
The substrate support structure incorporates a movable lift pin that can adjust the substrate's vertical position dynamically. This dynamic adjustment capability allows precise control of the substrate-to-heater distance, thereby improving temperature control precision. The mechanical complexity is managed by using a simple linear actuation mechanism rather than complex multi-axis positioning systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and effective etching and annealing processes to be conducted on a substrate without removing it from the chamber, enhancing process efficiency and reducing handling steps.
Implementation Method 1
a plasma source configured to excite gas inside the chamber to into a plasma state for an annealing process
Implementation Method 2
a heater, a supporting member inside the chamber and configured to support a substrate
Implementation Method 3
a lift pin that is movable in a vertical direction and is configured to move the substrate vertically with respect to the heater
Data Source
AI summary
A substrate processing apparatus includes a chamber, a heater, a supporting member inside the chamber and configured to support a substrate, the supporting member including a lift pin that is movable in a vertical direction and is configured to move the substrate vertically with respect to the heater, a plasma source configured to excite gas inside the chamber to into a plasma state for an annealing process, and a gas supply member configured to supply gas into the chamber for a substrate processing process.