Substrate Holder Gas Pressure Control for Faster Thermal Contact
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Solution Overview
Problem
The semiconductor manufacturing process faces inefficiencies in heat transfer gas supply times, which hinder productivity in substrate processing.
Innovation Solution
A substrate processing apparatus and method that utilize a heat transfer gas supply/exhaust system with a hermetic container and valve control system to rapidly adjust gas pressure between the substrate and substrate holder, allowing for accelerated gas supply and exhaust operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat transfer gas is supplied between substrate and substrate holder to adjust substrate temperature, then substrate temperature control is improved, but processing time increases due to slow gas supply
Solution Approach 1:
The hermetic container pre-stores heat transfer gas at high pressure before processing begins. This preliminary preparation allows rapid gas supply when needed, eliminating the time-consuming gas delivery process and enabling quick temperature adjustment during substrate processing.
Solution Approach 2:
The system changes the pressure parameter of the heat transfer gas by storing it at high pressure within the hermetic container. This pressure parameter change enables rapid gas flow and quick establishment of thermal contact between substrate and holder, significantly reducing temperature adjustment time while maintaining effective heat transfer.
2Speed
If gas pressure is increased to accelerate gas supply, then gas supply speed is improved, but system complexity increases due to additional valve control mechanisms
Solution Approach 1:
The gas control system is segmented into two independent valve functions: the first valve controls gas supply from the hermetic container to the processing chamber, while the second valve controls gas exhaust from the chamber. This segmentation allows each valve to operate independently at optimal pressure control, simplifying the overall control logic while achieving rapid gas supply and exhaust.
Solution Approach 2:
The hermetic container acts as an intermediary component that pre-stores high-pressure gas, mediating between the gas source and the processing chamber. This intermediary structure enables rapid gas delivery without requiring complex pressure regulation systems, as the pre-compressed gas naturally flows at high speed when the valve opens.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required for heat transfer gas supply, enhancing productivity by optimizing gas pressure control and processing efficiency.
Implementation Method 1
a hermetic container provided in the vacuum processing chamber and having a gas pressure higher than a gas pressure in the vacuum processing chamber
Implementation Method 2
a heat transfer gas may be supplied between a substrate held by a substrate holder in a vacuum processing chamber and the substrate holder to adjust a temperature of the substrate
Data Source
AI summary
A substrate processing apparatus includes: a vacuum processing chamber; a substrate holder provided in the vacuum processing chamber and holding the substrate; a sealing forming a closed space between the substrate held by the substrate holder and the substrate holder; a gas path communicating with the closed space; a gas supply path supplying a gas into the gas path; a gas exhaust path exhausting the gas from the gas path; a first valve capable of opening and closing a space between the gas path and the gas supply path; and a second valve capable of opening and closing a space between the gas path and the gas exhaust path.