Lithographic Substrate Holder Planarization and Electrostatic Clamping
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Solution Overview
Problem
In lithographic apparatuses, the substrate holder's surface roughness hinders the reliable formation of thin film components, and existing clamping methods are inadequate for high-throughput operations, especially in extreme ultraviolet (EUV) lithography where vacuum clamping is ineffective.
Innovation Solution
A substrate holder with a planarization layer and a thin film stack integrated into the substrate holder, featuring a main body with burls for substrate support, and incorporating electrostatic clamping for secure substrate retention, along with temperature control mechanisms to mitigate thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate holder surface is used directly for thin film component formation, then the manufacturing process is simpler, but the surface roughness hinders reliable thin film component formation
Solution Approach 1:
The substrate holder is divided into two functional parts: the original holder body and an added planarization layer. This segmentation allows the rough holder surface to be separated from the thin film formation area, enabling reliable thin film component formation while maintaining the original holder structure.
Solution Approach 2:
A planarization layer is introduced as an intermediary between the rough substrate holder surface and the thin film components. This intermediate layer provides a smooth surface for reliable thin film formation while being attached to the existing holder structure, resolving the contradiction between surface quality and structural simplicity.
2Adaptability or versatility
If vacuum clamping is used, then the clamping mechanism is simpler, but it is ineffective in EUV lithography where vacuum conditions cannot be maintained
Solution Approach 1:
The clamping mechanism transitions from vacuum-based (pressure differential) to electrostatic-based (electric field). This parameter change in the physical principle enables the substrate holder to be used in both atmospheric pressure (EUV) and vacuum (DUV) lithography conditions, improving adaptability while maintaining a relatively simple integrated structure.
Solution Approach 2:
The vacuum clamping mechanism (mechanical pressure system) is replaced with an electrostatic clamping mechanism (electric field system). This substitution eliminates the need for vacuum conditions, enabling the substrate holder to function in EUV lithography while maintaining effective substrate retention through electrostatic forces.
3Productivity
If high-throughput operations are implemented, then productivity increases, but existing clamping methods become inadequate and substrate retention becomes unreliable
Solution Approach 1:
The electrostatic clamping mechanism provides continuous and stable substrate retention throughout the high-speed lithography cycle. The electrostatic field maintains constant holding force on the substrate during rapid positioning and exposure operations, ensuring reliability even during high-throughput operations where mechanical clamping might fail.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a smooth surface for reliable thin film component formation and ensures secure substrate clamping across high-throughput operations, including EUV lithography, by reducing surface roughness and integrating effective temperature control.
Implementation Method 1
incorporating electrostatic clamping for secure substrate retention
Implementation Method 2
temperature control mechanisms to mitigate thermal stress
Data Source
AI summary
A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of a thin film stack forming an electronic component. The thin film stack comprises an (optional) isolation layer, a metal layer forming an electrode, a sensor, a heater, a transistor or a logic device, and a top isolation layer.