Substrate Gas-Nozzle Hole Widening for Low-Residue Drying
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Solution Overview
Problem
Existing substrate processing methods face challenges in minimizing the presence of liquid residue in formed holes and reducing airflow disturbances during hole widening on substrate surfaces, particularly in the processing of substrates for semiconductor wafers and flat panel displays.
Innovation Solution
A method involving a fluid nozzle that discharges gas at varying flow rates from different positions to form and widen holes on a substrate surface, combined with rotational drying and radial gas discharge to enhance airflow management and evaporation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gas is discharged at a high flow rate while the nozzle remains near the substrate, then the hole widening speed is improved, but airflow disturbance increases and liquid may remain in the hole
Solution Approach 1:
The nozzle is moved from a horizontal position near the substrate to a vertical position above the substrate. This spatial repositioning in the vertical dimension allows high flow rate gas discharge to widen the hole effectively while the vertical distance reduces airflow disturbance and prevents liquid retention, resolving the contradiction between hole widening speed and airflow disturbance
2Object-affected harmful factors
If the nozzle is moved away from the substrate to reduce airflow disturbance, then airflow stability is improved, but the hole is likely to retain liquid
Solution Approach 1:
By positioning the nozzle vertically above the substrate rather than horizontally near it, the system achieves both goals: the vertical distance reduces airflow disturbance while the direct vertical gas flow path maintains effective liquid removal from the hole, simultaneously improving airflow stability and liquid removal completeness
3Productivity
If gas discharge flow rate is increased to widen the hole faster, then processing efficiency is improved, but liquid retention in the hole increases
Solution Approach 1:
The vertical positioning of the nozzle above the substrate enables high flow rate gas discharge to effectively widen the hole while the vertical flow direction prevents liquid retention, achieving both high processing efficiency and complete liquid removal that cannot be achieved with horizontal nozzle positioning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively reduces liquid residue and airflow disturbances, ensuring efficient and high-quality substrate processing by minimizing liquid retention and promoting uniform drying.
Implementation Method 1
discharging gas at a hole-forming flow rate from a central discharge port of a fluid nozzle located at a central lower position which is a position above the substrate, toward a central portion of the upper surface of the substrate to form at a central portion of the liquid film an exposing hole
Implementation Method 2
rotating the substrate around a vertical rotational axis passing through the central portion of the upper surface of the substrate while causing the central discharge port to discharge gas toward the central portion of the upper surface of the substrate at a drying flow rate
Implementation Method 3
promoting uniform drying
Data Source
AI summary
A substrate processing method includes a liquid film forming step, a hole forming step of discharging gas at a hole-forming flow rate from a central discharge port of a fluid nozzle located at a central lower position toward a central portion of the upper surface of the substrate to form at a central portion of the liquid film an exposing hole where the central portion of the upper surface of the substrate is exposed, and a hole widening step of discharging gas at a hole-widening flow rate greater than the hole-forming flow rate, from the central discharge port of the fluid nozzle located at a central upper position higher than the central lower position, toward the central portion of the upper surface of the substrate to widen an outer edge of the exposing hole up to an outer perimeter of the upper surface of the substrate.