Semiconductor Substrate Hydrogen Profiling for Uniform Donor Concentration
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Solution Overview
Problem
Conventional semiconductor manufacturing techniques face challenges in achieving a uniform and controlled distribution of hydrogen donors across a semiconductor substrate, leading to variations in doping concentration and crystallinity, which affect the device's performance and reliability.
Innovation Solution
A semiconductor device with a substrate that has a hydrogen chemical concentration distribution that is either flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface, featuring a termination dangling bond flat region and a manufacturing method involving hydrogen irradiation and heat treatment to control the donor concentration and crystallinity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If hydrogen is implanted into a predetermined depth of a semiconductor substrate and diffused, then the doping concentration can be increased, but the hydrogen concentration distribution becomes non-uniform with local peaks
Solution Approach 1:
The patent applies preliminary action by performing multiple sequential hydrogen implantations at different depths before the final diffusion step. The first hydrogen implantation introduces hydrogen at a predetermined depth, then a second hydrogen implantation adds hydrogen at a different depth, and finally heat treatment causes diffusion that combines these layers. This preliminary structuring of hydrogen distribution at different depths before diffusion ensures that the final uniform concentration is achieved without local peaks, resolving the contradiction between increasing doping concentration and maintaining distribution uniformity.
2Quantity of substance
If hydrogen is diffused throughout the semiconductor substrate, then the donor concentration increases, but variations in crystallinity occur across the substrate
Solution Approach 1:
The patent applies preliminary action by introducing hydrogen at multiple predetermined depths through sequential implantations before the diffusion step. This creates a pre-structured hydrogen distribution pattern that, when diffused, results in a uniform final concentration. The multi-step preliminary implantation process ensures that hydrogen is distributed in a controlled manner throughout the substrate, preventing local accumulations that would cause crystallinity variations, thus resolving the contradiction between increasing donor concentration and maintaining crystallinity uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a consistent and higher donor concentration throughout the substrate, improving the semiconductor device's performance by reducing variations and enhancing crystallinity, thus addressing the challenges of uniform doping and crystallinity disturbance.
Implementation Method 1
hydrogen is implanted into a predetermined depth of a semiconductor substrate
Implementation Method 2
hydrogen is implanted into a predetermined depth of a semiconductor substrate and diffused
Data Source
AI summary
Provided is a semiconductor device, including a semiconductor substrate having an upper surface and a lower surface and including a bulk donor, wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction is flat, monotonically increasing, or monotonically decreasing from the lower surface to the upper surface except for a portion where a local hydrogen concentration peak is provided; and a donor concentration of the semiconductor substrate is higher than a bulk donor concentration over an entire region from the upper surface to the lower surface. Hydrogen ions may be irradiated from the upper surface or the lower surface of the semiconductor substrate so as to penetrate the semiconductor substrate in the depth direction.