Substrate Treatment Laser Beam Profile Adjustment
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Solution Overview
Problem
The existing substrate treatment technologies face challenges in performing precise and uniform etching on masks due to variations in the working distance, which affect the laser beam profile, leading to inaccurate irradiation of anchor patterns and compromised critical dimension correction processes.
Innovation Solution
A substrate treatment apparatus with a support unit, liquid supply unit, and a laser unit that includes an oscillation unit, expander, and diffraction unit, allowing for the adjustment of the laser beam profile by separating light into multiple bundles and changing the intensity and diameter, enabling precise and uniform etching on specific regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the working distance between the mask and laser head is changed, then the laser beam profile is changed, but the irradiation accuracy of the anchor pattern deteriorates
Solution Approach 1:
The patent applies dynamics by making the laser beam profile adjustable through a diffraction unit that can separate light into multiple bundles with varying intensities and diameters. This dynamic adjustment capability allows the system to adapt to different working distances while maintaining irradiation accuracy, directly resolving the contradiction between adaptability and precision.
Solution Approach 2:
The patent changes physical parameters of the laser beam (intensity distribution, diameter, and bundle configuration) through the diffraction unit. By adjusting these parameters according to working distance variations, the system maintains accurate irradiation of the anchor pattern, resolving the contradiction between parameter adaptability and irradiation precision.
2Device complexity
If the laser beam profile is not accurately adjusted, then the process is simpler, but the critical dimension correction precision deteriorates
Solution Approach 1:
The patent segments the laser beam into multiple light bundles using the diffraction unit, allowing different regions of the beam to have different intensities and diameters. This segmentation enables precise control of the irradiation profile on the anchor pattern, achieving high critical dimension correction precision while managing system complexity through modular optical components.
Solution Approach 2:
The diffraction unit acts as an intermediary between the laser oscillation unit and the mask, transforming the basic laser beam into a profiled beam with controlled intensity and diameter distributions. This intermediary component enables precise critical dimension correction without requiring complex control systems, as the diffraction unit inherently shapes the beam profile.
3Productivity
If the anchor pattern is over-etched, then the etching process is more aggressive, but the critical dimension uniformity deteriorates
Solution Approach 1:
The patent applies local quality by creating a non-uniform laser beam profile where different regions have different intensities and diameters. This allows selective etching of the anchor pattern with varying etching rates across different areas, enabling high overall etching productivity while maintaining uniform critical dimensions through localized intensity control.
Solution Approach 2:
The patent uses partial action by selectively applying etching intensity to specific regions of the anchor pattern through the diffraction unit's beam shaping. Rather than uniformly over-etching the entire pattern, the system applies targeted etching action to achieve the required critical dimension correction while maintaining uniformity, avoiding the harmful effects of excessive uniform etching.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves precise and uniform etching on substrates by flexibly altering the laser beam profile, ensuring accurate irradiation and correction of critical dimensions, even with changes in working distance, thereby enhancing process uniformity and reducing defects.
Implementation Method 1
a diffraction unit that separates light into a plurality of light bundles and irradiates a substrate supported by the support unit with an adjustment light having a profile changed from a profile of the light
Implementation Method 2
a laser unit that heats the substrate supported by the support unit
Implementation Method 3
a laser unit that heats the substrate supported by the support unit
Data Source
AI summary
The present disclosure relates to an apparatus for treating a substrate. The substrate treatment apparatus includes a support unit that supports a substrate, a liquid supply unit that supplies a liquid to the substrate supported by the support unit, and a laser unit that heats the substrate supported by the support unit, wherein the laser unit includes an oscillation unit that emits a light, and a diffraction unit that separates the light into a plurality of light bundles and irradiates the substrate supported by the support unit with an adjustment light having a profile changed from a profile of the light.