Substrate Laser Reflection Control for Uniform Etch Heating

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Solution Overview

Problem

Existing substrate etching processes face challenges in achieving high etching selectivity, uniformity, and etch rate distribution, particularly in high-integration semiconductor devices, where temperature variations affect etching performance.

Innovation Solution

A substrate treating apparatus that includes a laser irradiation unit and a laser reflection unit with tiltable reflection members to control laser distribution and temperature uniformity, enhancing etching performance by adjusting laser tilt angles based on substrate temperature monitoring.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If laser irradiation is applied to heat the substrate, then etching performance is improved, but temperature distribution uniformity deteriorates

Engineering Contradiction:
Improveetching performanceVSAvoidtemperature distribution uniformity
Core Design Contradiction:
ProductivityVSTemperature

Solution Approach 1:

The patent applies local quality by using a tiltable reflection member to redirect laser beams to specific regions of the substrate. The reflection member can be tilted at different angles to concentrate laser irradiation on particular zones, allowing different parts of the substrate to receive differentiated heating treatment based on their specific temperature requirements and etching needs.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements dynamics by making the reflection member tiltable and adjustable during the laser irradiation process. The reflection member's angle can be dynamically changed to redirect laser beams to different substrate regions, enabling real-time adjustment of temperature distribution to maintain uniformity while improving etching performance.

Inventive Principle:
Principle #15Dynamics

2Temperature

If laser irradiation is concentrated on specific zones, then temperature control is improved, but etch rate uniformity deteriorates

Engineering Contradiction:
Improvetemperature controlVSAvoidetch rate uniformity
Core Design Contradiction:
TemperatureVSManufacturing precision

Solution Approach 1:

The patent applies periodic action by rotating the substrate during laser irradiation. This rotation ensures that all regions of the substrate sequentially pass through the laser irradiation zone, allowing each region to receive appropriate heating treatment. The periodic rotation maintains temperature control while ensuring uniform etch rate distribution across the entire substrate surface.

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent uses dynamics by combining the tiltable reflection member with substrate rotation. The reflection member's angle can be adjusted based on real-time temperature feedback, while the substrate rotates to ensure all regions are treated. This dynamic coordination allows precise temperature control in specific zones while maintaining overall etch rate uniformity through continuous motion and redistribution.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus achieves uniform etch rate distribution, effective temperature control, and improved etching performance by concentrating laser irradiation on specific substrate zones, addressing temperature-induced etch rate variations.

Implementation Method 1

a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit

Methodology Applied
Scientific EffectLaser heating: Laser

Implementation Method 2

a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate

Methodology Applied
Scientific EffectLaser reflection: Reflection

Data Source

PatentUS12550661B2Apparatus for treating substrate
Publication Date: 2026.02.10 SYSTEM ENGINEERING MEGA SOLUTION CO LTD
  • US12550661B2 patent drawing
  • US12550661B2 patent drawing
  • US12550661B2 patent drawing

AI summary

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.