Insulating Substrate Layout for Cooler Semiconductor Connections

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Solution Overview

Problem

In semiconductor devices with two insulating substrates, excessive heat generation occurs at connection members such as wires connecting the substrates, leading to potential melting and failure.

Innovation Solution

The semiconductor device design includes transistors and diodes on separate insulating substrates, with distinct current paths between them, reducing heat generation at connection members by using different conductive paths for current flow and employing metal plates for enhanced current transfer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If transistors and diodes are disposed on the same insulating substrate, then the device structure is simplified, but excessive heat generation occurs at connection members connecting insulating substrates

Engineering Contradiction:
Improvedevice structureVSAvoidheat generation at connection members
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent divides the semiconductor device into multiple insulating substrates, with each substrate carrying specific components (transistors on one substrate, diodes on another). This segmentation separates current paths, preventing excessive heat accumulation at connection members between substrates while maintaining overall structural organization.

Inventive Principle:
Principle #1Segmentation

2Adaptability or versatility

If connection members connect multiple insulating substrates, then component integration is achieved, but heat generation at connection members causes melting and failure

Engineering Contradiction:
Improvecomponent integrationVSAvoidconnection member reliability
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

By segmenting the device into separate insulating substrates with distinct current paths, the patent reduces current concentration at connection members, thereby reducing heat generation and improving connection reliability while maintaining component integration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces intermediate connection members (metal plates) with high thermal and electrical conductivity to mediate connections between insulating substrates. These intermediaries efficiently conduct current while dissipating heat, preventing temperature buildup that would cause melting or failure.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If current flows through the same connection member between substrates, then wiring is simplified, but heat generation becomes excessive

Engineering Contradiction:
Improvewiring complexityVSAvoidheat generation at connection members
Core Design Contradiction:
Device complexityVSTemperature

Solution Approach 1:

The patent segments current paths by assigning different current flows to different connection members between substrates. This prevents current concentration in single connection members, reducing heat generation while maintaining manageable wiring complexity through systematic current path distribution.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively reduces heat generation at connection members, preventing overheating and melting, while facilitating easier connection and improved current flow, thus enhancing the reliability and efficiency of the semiconductor device.

Implementation Method 1

a first diode having a first anode electrode and a first cathode electrode, the first diode being connected in parallel to the first transistor

Methodology Applied
Scientific EffectDiode conduction: Diode

Implementation Method 2

paths of the currents flowing between the first insulating substrate and the second insulating substrate can be different

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

a heat dissipation plate having a first main surface and a second main surface opposite to the first main surface, the first insulating substrate and the second insulating substrate are mounted on the first main surface

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20230335412A1Semiconductor device
Publication Date: 2023.10.19 SUMITOMO ELECTRIC INDUSTRIES LTD
  • US20230335412A1 patent drawing
  • US20230335412A1 patent drawing
  • US20230335412A1 patent drawing

AI summary

A semiconductor device includes a first insulating substrate, a second insulating substrate, a first transistor provided on the first insulating substrate, and a first diode provided on the second insulating substrate and connected in parallel to the first transistor.