Semiconductor Substrate Ion Implantation Mask Removal
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The conventional two-layer process for forming three-dimensional transistors faces challenges in handling the larger substrate unevenness, leading to difficulties in removing silicon-containing resist under layer film residues without damaging the substrate during the ion implantation process.
Innovation Solution
A three-layer process is adapted, where a silicon-containing film with a specific silicon content is used, allowing for the use of a peeling liquid to remove the organic under layer film residue without damaging the substrate, utilizing a resist composition with a polymer whose polarity changes with acid action and a peeling liquid containing hydrogen peroxide and sulfuric acid.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If dry etching is used to remove under layer film residue in the conventional wiring process, then the residue can be effectively removed, but the substrate is damaged when applying this method to the transistor forming process
Solution Approach 1:
The invention changes the removal method from dry etching to wet peeling by introducing a peeling liquid. This parameter change in the removal process enables effective residue removal without causing substrate damage, as the peeling liquid selectively dissolves the organic under layer film residue while leaving the substrate intact.
Solution Approach 2:
The invention introduces a peeling liquid as an intermediary substance between the under layer film residue and the substrate. This intermediary selectively interacts with the residue to enable removal while protecting the substrate from damage, resolving the contradiction between effective removal and substrate protection.
2Manufacturing precision
If a three-layer process with silicon-containing resist under layer film is used to form three-dimensional transistors, then pattern transfer precision is improved, but the complexity of the process increases
Solution Approach 1:
The invention extracts the silicon-containing film from the multi-layer resist structure and replaces it with an organic under layer film that has etching selectivity relative to the photoresist film. This extraction simplifies the process by eliminating the need for silicon-containing films while maintaining the benefits of the three-layer process for pattern transfer precision.
Solution Approach 2:
The invention changes the material parameter of the under layer film from silicon-containing to organic material. This parameter change maintains the necessary etching selectivity while simplifying the removal process through wet peeling, thereby reducing process complexity while preserving manufacturing precision.
3Manufacturing precision
If the silicon content in the silicon-containing film is increased to improve etching selectivity, then the etching performance improves, but the ease of peeling the under layer film residue decreases
Solution Approach 1:
The invention changes the material composition parameter by replacing silicon-containing films with organic under layer films. This parameter change achieves the necessary etching selectivity while maintaining easy peelability through wet chemical processes, resolving the contradiction between etching performance and peeling ease.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient peeling of the mask used for ion implantation without damaging the semiconductor apparatus substrate, facilitating the production of three-dimensional transistors by maintaining substrate integrity and achieving precise pattern transfer.
Implementation Method 1
wet peeling can be easily carried out with a peeling liquid without causing damage to the semiconductor apparatus substrate
Implementation Method 2
the resist composition containing a polymer whose polarity is changed by an acid action to change solubility thereof in a developer
Implementation Method 3
the pattern is transferred to the silicon-containing film by dry etching using the resist pattern as a dry etching mask
Implementation Method 4
implanting ions into the substrate to be processed for producing a semiconductor apparatus using the organic under layer film to which the pattern has been transferred as a mask
Data Source
AI summary
A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.