Substrate Measurement Beam Alignment via Pattern Center Detection
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Solution Overview
Problem
As semiconductor devices become smaller, the accuracy of thin film thickness measurement on substrates is compromised due to reduced measurement areas, leading to potential measurement errors and decreased device quality.
Innovation Solution
A method involving the use of a measuring apparatus that irradiates a measurement beam onto an identifiable pattern on the substrate, detects the center position, calculates and adjusts the beam's position to align with the pattern's center, and then measures the thickness, ensuring accurate alignment and measurement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If the measurement area is reduced to accommodate smaller semiconductor devices, then the device miniaturization is achieved, but the measurement accuracy deteriorates
Solution Approach 1:
The patent applies preliminary action by detecting the center position of the measurement beam and the center position of the pattern before performing the thickness measurement. This allows the system to calculate the shift amount and correct the beam position in advance, ensuring accurate measurement even on miniaturized devices with limited measurement areas.
Solution Approach 2:
The patent implements feedback by detecting the actual position of the measurement beam on the substrate, comparing it with the intended target position, calculating the shift amount, and using this information to adjust the beam position. This closed-loop feedback mechanism ensures high measurement accuracy despite device miniaturization.
2Manufacturing precision
If the design rule is made finer to achieve smaller device features, then the device integration is improved, but the measurement reliability deteriorates due to position deviation
Solution Approach 1:
The patent uses feedback by continuously monitoring the measurement beam position, calculating the deviation from the target position, and adjusting the beam position based on the calculated shift amount. This ensures reliable measurements on fine-pitch devices where even minor position deviations can cause errors.
Solution Approach 2:
The patent replaces mechanical positioning methods with an optical-based detection and calculation system. By using optical detection to identify the measurement beam position and pattern center, and calculating the shift through coordinate analysis, the system achieves higher precision than traditional mechanical positioning methods.
3Area of moving object
If the measurement area is reduced for smaller devices, then the device scale is improved, but the measurement accuracy deteriorates due to minute position deviations
Solution Approach 1:
The patent performs preliminary detection of the measurement beam center position and pattern center position before the actual thickness measurement. This allows the system to calculate the position shift and correct the beam alignment in advance, maximizing the use of the limited measurement area while maintaining high accuracy.
Solution Approach 2:
The patent employs optical detection and mathematical calculation to determine beam position and correct deviations, replacing less precise mechanical positioning methods. This substitution enables accurate measurements within reduced measurement areas by precisely tracking and correcting beam position through coordinate analysis.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the accuracy of thin film thickness measurement, reducing measurement errors and improving the reliability of semiconductor device manufacturing by ensuring precise alignment and measurement, even at smaller scales.
Implementation Method 1
irradiating a measurement beam into an identifiable pattern of the substrate, detecting a center position of the irradiated measurement beam
Data Source
AI summary
A method for measuring a substrate is provided. The method comprises irradiating a measurement beam into a site box of an identifiable pattern of a substrate, detecting a center position of the irradiated measurement beam, calculating an amount of shift of the center position of the measurement beam from the center position of the site box, and correcting the center position of the measurement beam to the center position of the site box by compensating the calculated amount of shift.


