Circuit Substrate Drying via Localized Meniscus Heating
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Solution Overview
Problem
Existing methods for drying semiconductor substrates after flushing often result in residual corrosion pockets due to temperature strain or the use of surfactants, which can be costly and require special safety measures when using alcohol as a flushing liquid.
Innovation Solution
A method involving the movement of the circuit substrate relative to the flushing liquid to form a liquid meniscus, with thermal radiation applied to the transition area to promote evaporation while maintaining the substrate within a permissible temperature range, using a device with an infrared radiator and ventilation to prevent overheating and contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If temperature is applied to the circuit substrate to accelerate evaporation of flushing water, then drying speed is improved, but temperature strain on the substrate increases beyond permissible limits
Solution Approach 1:
The patent applies thermal radiation locally only to the liquid meniscus area at the transition zone between the circuit substrate and flushing liquid, rather than heating the entire substrate. This localized heating accelerates evaporation at the critical drying front while keeping the bulk substrate temperature within permissible limits, thus resolving the contradiction between drying speed and temperature strain.
Solution Approach 2:
The patent introduces thermal radiation as a third dimension of heat transfer (radiation) in addition to conventional conduction and convection. By using infrared radiation to directly heat the liquid meniscus, the system achieves rapid evaporation without requiring high substrate temperatures, thereby improving drying speed while controlling temperature strain.
2Manufacturing precision
If surfactants are added to flushing liquid to reduce surface tension and improve draining, then drying quality is improved, but residues remain on the terminal surface
Solution Approach 1:
The patent extracts and eliminates the need for surfactants by using thermal radiation to directly evaporate the flushing liquid. By removing the surfactant component from the flushing liquid formulation, the system achieves residue-free drying through controlled thermal evaporation of pure deionized water, thus improving drying quality without introducing harmful residues.
3Manufacturing precision
If alcohol is used as flushing liquid to avoid residues, then drying quality is improved, but explosion protection measures are required increasing cost
Solution Approach 1:
The patent changes the chemical parameter of the flushing liquid from flammable alcohol to non-flammable deionized water, while compensating for the lower evaporation rate by introducing thermal radiation. This parameter substitution maintains drying quality through controlled thermal evaporation while eliminating the need for expensive explosion protection measures.
4Manufacturing precision
If flushing liquid is evaporated rapidly to prevent residues, then drying quality is improved, but contamination by convection carriers increases
Solution Approach 1:
The patent applies thermal radiation locally to the liquid meniscus area, creating a localized evaporation zone that minimizes convection currents. By concentrating heat input at the drying front rather than throughout the entire substrate, the system achieves rapid evaporation while preventing widespread contamination from convection carriers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for residue-free drying of semiconductor substrates without excessive temperature strain, preventing overheating and contamination, and enabling efficient evaporation while maintaining a safe and cost-effective process.
Implementation Method 1
in the drying step thermal radiation is applied to the transition area wetted by the liquid meniscus
Implementation Method 2
the circuit substrate has thermal radiation applied to it in a transition area wetted with the liquid meniscus, so that a temperature increase of the liquid meniscus, which causes evaporation, occurs in the circuit substrate via absorption of the thermal radiation
Implementation Method 3
heat is always dissipated from the circuit substrate into the liquid bath in parallel to the temperature application, so that overheating of the substrate may be precluded as much as possible
Data Source
AI summary
Method and device for drying circuit substrates (13), in particular semiconductor substrates, in which a circuit surface (30) of the circuit substrate is flushed using a flushing liquid (10) in a flushing step and the circuit surface is dried in a subsequent drying step, the circuit substrate being moved in the flushing step in the direction of its planar extension transversely and in relation to a liquid level (28) of the flushing liquid in such a way that a liquid meniscus forms at a transition area between the circuit surface and the liquid level, which changes because of the relative movement, and thermal radiation (36) is applied to the transition area wetted by the liquid meniscus in the drying step.