Substrate Metallization Oxidation Prevention

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Solution Overview

Problem

Conventional MEOL metallization processes face challenges with oxidation forming on metal liner or seed layers during transfer between processing chambers, leading to increased fabrication costs and decreased throughput due to the need for additional oxidation processes.

Innovation Solution

The method involves depositing a silicide layer within a feature on a substrate using physical vapor deposition (PVD), followed by depositing a metal liner or seed layer using PVD, and subsequently using chemical vapor deposition (CVD) or atomic layer deposition (ALD) without vacuum breaks to minimize oxidation, thereby eliminating the need for oxidation processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the substrate is transferred from PVD chamber to CVD/ALD chamber, then subsequent metal layer deposition can be performed, but oxidation develops on the metal liner layer or metal seed layer

Engineering Contradiction:

Improvemetal layer oxidation resistanceVSAvoidfabrication throughput

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The patent applies inert atmosphere by maintaining vacuum conditions between PVD and CVD/ALD chambers, preventing oxygen exposure to the metal liner/seed layer during transfer. The vacuum environment acts as an inert barrier that eliminates oxidation without requiring additional protective processing steps, thus maintaining both reliability and productivity.

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

Solution Approach 2:

The patent implements continuous processing by eliminating vacuum breaks between deposition chambers. The substrate remains under vacuum throughout the transfer and deposition sequence, creating an unbroken protective environment that prevents oxidation while maintaining continuous fabrication flow, thereby resolving the contradiction between oxidation resistance and throughput.

Inventive Principle:

Principle #20Continuity of useful action

2Manufacturing precision

If oxidation processes are performed to remove oxidation, then gapfill performance and stack resistivity are improved, but fabrication costs increase and throughput decreases

Engineering Contradiction:

Improvegapfill performanceVSAvoidfabrication throughput

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent applies preliminary action by preventing oxidation at the source through continuous vacuum processing, rather than requiring subsequent oxidation removal steps. By establishing the protective vacuum environment before oxidation can occur, the process eliminates the need for additional oxidation processes while maintaining gapfill performance and reducing resistivity.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent converts the potential harm of oxidation into a benefit by using the vacuum environment not just as a processing condition but as an active protective mechanism. The vacuum serves dual purposes: enabling deposition while simultaneously preventing oxidation, thereby eliminating the need for separate oxidation removal steps and improving throughput.

Inventive Principle:

Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces fabrication costs and increases throughput by preventing oxidation on the metal liner or seed layers, enhancing the gapfill performance and reducing resistivity of the substrate.

Implementation Method 1

depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 3

depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer

Methodology Applied

Scientific EffectAtomic layer deposition:

Data Source

PatentUS12104243B2Methods and apparatus for processing a substrate

Publication Date: 2024.10.01 APPLIED MATERIALS INC

AI summary

Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.