Substrate Nozzle Two-Stage Flow Rate Development
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing substrate processing methods face challenges in achieving uniform film development across the substrate, particularly in ensuring sufficient development in the central portion compared to the outer peripheral regions, leading to inefficiencies and inconsistencies in the developing process.
Innovation Solution
A method involving a two-stage developing process where a nozzle with a discharge port is used to discharge a developer at a first flow rate during the first developing process, followed by a second flow rate at a position facing the center of the substrate, while rotating, to enhance development uniformity and efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single flow rate is used throughout the developing process, then the process is simple, but uniform development across the substrate cannot be achieved
Solution Approach 1:
The patent applies dynamics by changing the developer discharge flow rate from a static single value to a dynamic two-stage variable flow rate. The flow rate is increased from a first flow rate to a second flow rate (higher than the first) during the developing process, allowing the system to adapt to different development needs at different stages and positions, thereby achieving uniform development across the substrate while maintaining manageable process complexity
Solution Approach 2:
The patent changes the parameter of developer discharge flow rate from a constant value to a variable value with two distinct stages. By adjusting the flow rate parameter - using a first flow rate initially and then increasing to a second flow rate - the system optimizes development uniformity across different regions of the substrate, resolving the contradiction between simplicity and precision
2Productivity
If the nozzle remains stationary or moves slowly, then development time is sufficient, but productivity decreases
Solution Approach 1:
The patent maintains continuous useful action by implementing a two-stage developing process where the nozzle continuously discharges developer at optimized flow rates throughout the substrate surface. The continuous operation at elevated second flow rate ensures both high productivity and uniform development, eliminating idle or ineffective periods while maintaining development quality
Solution Approach 2:
The patent applies dynamics by implementing rapid nozzle movement combined with dynamic flow rate adjustment. The nozzle moves quickly across the substrate while adjusting the developer discharge flow rate between two stages, achieving both high productivity through fast movement and development uniformity through optimized flow rate timing
3Productivity
If developer is discharged at high flow rate throughout, then development speed increases, but uniformity between central and peripheral regions deteriorates
Solution Approach 1:
The patent applies local quality by using different flow rates for different regions and stages of the developing process. The first flow rate is used for initial development, then the second (higher) flow rate is applied specifically to ensure uniform development in the central portion, addressing the local needs of different substrate regions to achieve overall uniformity while maintaining high development speed
Solution Approach 2:
The patent implements periodic action through the two-stage flow rate sequence. The developer discharge follows a periodic pattern with distinct phases - first at a lower flow rate, then transitioning to a higher second flow rate - which optimizes both development speed and uniformity by applying the appropriate flow rate at the appropriate time and location
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach ensures more uniform development across the substrate by addressing the disparity in development between the central and outer peripheral regions, improving the overall efficiency and effectiveness of the process.
Implementation Method 1
a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface of the substrate and the developer is discharged from the discharge port at a first flow rate
Implementation Method 2
while rotating the substrate
Data Source
AI summary
A method of processing a substrate includes: performing a first developing process of moving a nozzle having one end surface and a discharge port opened at the end surface while making the end surface come into contact with a developer on a front surface of a substrate in a state in which the nozzle is disposed so that the end surface faces the front surface and the developer is discharged from the discharge port at a first flow rate while rotating the substrate; and after the first developing process, performing a second developing process of discharging the developer from the discharge port at a second flow rate higher than the first flow rate in a state in which the end surface is in contact with the developer on the front surface at a position facing a center of the front surface of the substrate while rotating the substrate.