Substrate Processing Nozzle Gas Distribution
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Solution Overview
Problem
The thickness of oxide films formed on substrates in a reaction chamber varies due to differences in substrate arrangement positions, leading to non-uniform film thickness across substrates, particularly when dummy substrates or heat insulators are present, as they affect the consumption of atomic oxygen during film formation.
Innovation Solution
A substrate processing apparatus with multiple nozzles supplying hydrogen-containing and oxygen-containing gases, along with a dilution gas, is used to control the concentration of hydrogen-containing gas, ensuring uniform atomic oxygen distribution and film thickness across the substrate arrangement regions, including the use of a heat insulator to prevent diffusion of atomic oxygen from dummy regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple substrates are arranged at different locations in a reaction chamber to increase productivity, then the processing capacity is improved, but the uniformity of oxide film thickness across substrates deteriorates due to loading effects
Solution Approach 1:
The patent applies local quality by dividing the reaction chamber into multiple regions (first region for product substrates, second region for dummy substrates/heat insulators) and supplying gases with different concentrations to each region. The controller regulates hydrogen-containing gas and dilution gas flow rates to create different atomic oxygen concentrations in different regions, compensating for the loading effects caused by different substrate arrangements and achieving uniform oxide film thickness across all substrates.
2Manufacturing precision
If the flow rate of oxidizing gas is regulated to maintain uniform concentration in the reaction chamber, then the uniformity of oxide film thickness is improved, but the device complexity increases due to multiple nozzles and gas flow control mechanisms
Solution Approach 1:
The patent applies segmentation by dividing the gas supply system into multiple nozzles (first nozzle for hydrogen-containing gas, second nozzle for oxygen-containing gas, third nozzle for dilution gas) positioned at different locations corresponding to different substrate arrangement regions. Each nozzle independently supplies gas to its corresponding region, allowing precise local control of atomic oxygen concentration to achieve uniform oxide film thickness across substrates arranged at different positions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves uniform oxide film thickness across all substrates, reducing variations by controlling gas flow rates and using a heat insulator to minimize the impact of dummy substrates on atomic oxygen distribution, thereby improving film uniformity.
Implementation Method 1
a first nozzle arranged to correspond to a first region in which a plurality of product substrates are arranged in the substrate arrangement region, the first nozzle being configured to supply a hydrogen-containing gas into the reaction tube from a plurality of locations corresponding to the first region
Implementation Method 2
a second nozzle arranged to correspond to the first region, the second nozzle being configured to supply an oxygen-containing gas into the reaction tube from a position corresponding to the first region
Implementation Method 3
a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region in which a dummy substrate or a heat insulator or both held by the holder is arranged, the third nozzle being configured to supply a dilution gas into the reaction tube from a position corresponding to the second region
Implementation Method 4
a controller configured to be capable of controlling the hydrogen-containing gas supplied from the first nozzle and the dilution gas supplied from the third nozzle such that a concentration of the hydrogen-containing gas in the second region is lower than a concentration of the hydrogen-containing gas in the first region
Implementation Method 5
the use of a heat insulator to prevent diffusion of atomic oxygen from dummy regions
Data Source
AI summary
There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.