Substrate Processing Nozzle Arrangement for Gas Uniformity

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Solution Overview

Problem

In substrate processing for semiconductor devices, gas flow difficulties lead to uneven thin film formation across substrates, particularly between the outer periphery and center, resulting in reduced in-plane uniformity and productivity due to interference issues with transfer mechanisms and the complexity and cost of ring-shaped straightening vanes.

Innovation Solution

A substrate processing apparatus with processing and inactive gas supply nozzles arranged along the inner wall of the processing chamber to sandwich the processing gas supply nozzles, ensuring uniform gas distribution and preventing gas flow to the substrate edges, thereby promoting center gas supply without reducing the number of substrates processed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If ring-shaped straightening vanes are provided between the circumferential edge of substrates and the inner wall of the processing chamber to promote gas supply to the center of substrates, then in-plane uniformity of substrate processing is improved, but device complexity and manufacturing cost increase

Engineering Contradiction:

Improvein-plane uniformity of substrate processingVSAvoidcomplexity of substrate holder structure

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent removes the ring-shaped straightening vanes from the substrate holder structure and relocates their gas flow control function to the processing chamber wall. By extracting the vanes from the substrate holder, the patent simplifies the substrate holder structure while maintaining the gas flow control functionality through nozzles integrated into the chamber wall.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces gas supply nozzles as intermediary components mounted on the processing chamber wall to control gas flow distribution. These nozzles act as mediators between the gas source and the substrates, providing directed gas flow to the center areas without requiring complex mechanical structures like straightening vanes.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Manufacturing precision

If ring-shaped straightening vanes are provided to improve gas distribution to substrate centers, then in-plane uniformity is improved, but the number of substrates that can be collectively processed is reduced

Engineering Contradiction:

Improvein-plane uniformity of substrate processingVSAvoidnumber of substrates processed collectively

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent segments the gas supply system into multiple independent nozzles positioned at different locations on the processing chamber wall. This segmentation allows gas flow to be independently controlled for different substrate positions, enabling uniform processing across all substrates in the batch without requiring reduced substrate density.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent transitions from a radial gas flow approach (using ring-shaped vanes around substrate edges) to an axial gas flow approach (using nozzles positioned at the chamber wall to direct gas toward substrate centers). This dimensional change in gas flow direction enables better gas distribution without compromising substrate loading density.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

3Manufacturing precision

If ring-shaped straightening vanes are provided to control gas flow to substrates, then film thickness uniformity is improved, but substrate processing cost increases

Engineering Contradiction:

Improvefilm thickness uniformityVSAvoidmanufacturing cost of substrate holder

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent replaces expensive, complex ring-shaped straightening vanes with simple, inexpensive gas supply nozzles that can be easily manufactured and installed on the processing chamber wall. These nozzles provide the same gas flow control functionality at significantly reduced manufacturing cost.

Inventive Principle:

Principle #27Cheap short-living objects (Disposable)

Solution Approach 2:

The patent substitutes the mechanical straightening vane system with a gas flow control system using nozzles. Instead of using physical mechanical structures to redirect gas flow, the patent uses controlled gas ejection through nozzles to achieve the same gas distribution effect, thereby reducing mechanical complexity and cost.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances gas supply uniformity to the substrate centers, reduces film thickness variations, and maintains high productivity by eliminating the need for ring-shaped vanes, thus improving substrate processing efficiency and cost-effectiveness.

Implementation Method 1

supplying the gas from the processing gas supply nozzle to the inside of the processing chamber while exhausting the inside of the processing chamber by means of the exhaust line, whereby the gas is caused to pass spaces between each of the substrates

Methodology Applied

Scientific EffectGas flow:

Implementation Method 2

the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber

Methodology Applied

Scientific EffectGas flow:

Implementation Method 3

Methodology Applied

Scientific EffectThin film formation: Deposition (physical)

Data Source

PatentUS8828141B2Substrate processing apparatus and method for manufacturing semiconductor device

Publication Date: 2014.09.09 KOKUSAI DENKI KK

AI summary

A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.