Substrate Processing Nozzle for Residual Liquid Removal
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Solution Overview
Problem
Existing substrate processing methods struggle to effectively remove residual liquids from substrates after pattern formation, which can lead to reduced cleanliness and reliability of the patterns formed.
Innovation Solution
A substrate processing apparatus and method that utilize a nozzle device with a liquid discharger, a first gas injector, and a second gas injector to discharge a processing liquid with lower surface tension than the residual liquid, followed by controlled injection of first and second gases to efficiently replace and remove the residual liquid.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a rinse liquid is supplied onto the substrate to remove chemical liquid remaining on the substrate, then the chemical liquid on the substrate is replaced with the rinse liquid, but residual liquid remains on the substrate after the rinsing process
Solution Approach 1:
The patent changes the surface tension parameter by using IPA (isopropyl alcohol) instead of pure water for the rinsing process. IPA has lower surface tension than pure water, which allows it to more effectively replace and remove residual chemical liquids from the substrate surface, improving cleanliness while reducing harmful residual liquid effects
Solution Approach 2:
The patent introduces IPA as an intermediary substance between the chemical liquid and the final drying stage. IPA serves as a mediator that replaces the chemical liquid and residual water, facilitating easier removal and reducing surface tension-related damage to patterns on the substrate
2Reliability
If IPA is used in the drying process for the substrate, then damage of the pattern due to surface tension is reduced, but residual liquid removal effectiveness is insufficient
Solution Approach 1:
The patent modifies the surface tension parameter by using IPA with lower surface tension than pure water. This parameter change reduces the capillary action and surface tension forces that could damage delicate patterns on the substrate, while still maintaining effective liquid replacement and removal capabilities
Solution Approach 2:
The patent implements a multi-stage drying process with periodic actions: first supplying IPA vapor to the rotating substrate, then followed by gas injection. This periodic approach allows the IPA to progressively replace residual liquids while the substrate rotates, ensuring thorough yet gentle removal that protects pattern integrity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves improved cleanliness of the substrate by efficiently removing residual liquids, thereby enhancing the reliability of the patterns formed and reducing the risk of pattern damage due to surface tension.
Implementation Method 1
a processing liquid having a surface tension lower than that of the residual liquid is supplied to the nozzle device
Implementation Method 2
the first gas injector is formed to downwardly inject the first gas supplied from the fluid supply system
Implementation Method 3
the second gas injector is formed to radially inject the second gas supplied from the fluid supply system toward an outer peripheral end of the substrate in plan view
Implementation Method 4
a substrate holder that holds and rotates the substrate about an axis extending in a vertical direction
Data Source
AI summary
A rinse liquid remaining on a substrate after a rinsing process is replaced with a replacement liquid having a surface tension lower than that of the rinse liquid. During this replacement, a nozzle device is arranged at a nozzle upper position higher than a processing cup. The nozzle device is moved from a center to an outer peripheral end of the substrate in a horizontal direction while downwardly discharging the replacement liquid. Thereafter, the substrate is dried. During this drying, the nozzle device is lowered from a position above the center of the substrate to a nozzle lower position close to the substrate while gas is downwardly injected from the nozzle device. Further, the nozzle device is moved in a horizontal direction from the center to the outer peripheral end of the substrate while injection of gas is continued.