Substrate Processing Nozzle Segmentation for Film Uniformity

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

The existing substrate processing technologies face challenges in achieving uniform film thickness and characteristics across substrates due to variations in reaction by-products distribution, leading to non-uniform processing results.

Innovation Solution

A substrate processing apparatus with a gas supply system that includes nozzles for supplying first, second, and adsorption inhibitory gases, which are strategically positioned to ensure uniform gas distribution and inhibit adsorption, thereby maintaining consistent reaction by-product amounts across the substrate region.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a film is formed on a substrate using conventional gas supply methods, then the film formation process is simple, but the film thickness varies depending on the substrate arrangement position due to non-uniform distribution of reaction by-products

Engineering Contradiction:
Improvefilm thickness uniformityVSAvoidgas supply system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The gas supply system is segmented into multiple nozzles (first nozzle, second nozzle, third nozzle) with different gas supply holes arranged at specific positions. Each nozzle supplies gas to different regions of the substrate, allowing independent control of gas distribution to achieve uniform reaction by-product distribution across the entire substrate surface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the substrate are supplied with different gas compositions and flow rates through the segmented nozzle system. The first gas, second gas, and adsorption inhibitory gas are supplied to specific locations based on the local requirements for film formation and reaction by-product management, ensuring uniform film thickness across different substrate positions.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the gas supply system uses multiple nozzles with different gas types, then processing uniformity is improved, but the system complexity increases

Engineering Contradiction:
Improveprocessing uniformityVSAvoidnumber of nozzles and gas supply lines
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

Multiple gas supply functions are merged into an integrated nozzle system where the first nozzle, second nozzle, and third nozzle work together in a coordinated manner. The gas supply system combines the delivery of first gas, second gas, and adsorption inhibitory gas through a unified structural design, managing complexity through functional integration while maintaining processing uniformity.

Inventive Principle:
Principle #5Merging (Combining)

3Manufacturing precision

If adsorption inhibitory gas is supplied to inhibit adsorption of the first gas, then film thickness variation is reduced, but the gas supply system becomes more complex

Engineering Contradiction:
Improvefilm thickness consistencyVSAvoidgas supply control complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

An adsorption inhibitory gas is introduced as an intermediary substance that prevents excessive adsorption of the first gas on the substrate surface. This intermediary gas mediates the reaction process by controlling the adsorption equilibrium, ensuring that reaction by-products are uniformly distributed and film thickness remains consistent across different substrate positions.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances processing uniformity and reduces film thickness variations, improving the overall quality and consistency of films formed on substrates by controlling gas flow and adsorption inhibition.

Implementation Method 1

a third nozzle provided with one or more third gas supply holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the one or more substrates

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentUS12139792B2Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
Publication Date: 2024.11.12 KOKUSAI DENKI KK
  • US12139792B2 patent drawing
  • US12139792B2 patent drawing
  • US12139792B2 patent drawing

AI summary

There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively.