Substrate Processing Nozzle Segmentation for Film Uniformity
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Solution Overview
Problem
The existing substrate processing technologies face challenges in achieving uniform film thickness and characteristics across substrates due to variations in reaction by-products distribution, leading to non-uniform processing results.
Innovation Solution
A substrate processing apparatus with a gas supply system that includes nozzles for supplying first, second, and adsorption inhibitory gases, which are strategically positioned to ensure uniform gas distribution and inhibit adsorption, thereby maintaining consistent reaction by-product amounts across the substrate region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed on a substrate using conventional gas supply methods, then the film formation process is simple, but the film thickness varies depending on the substrate arrangement position due to non-uniform distribution of reaction by-products
Solution Approach 1:
The gas supply system is segmented into multiple nozzles (first nozzle, second nozzle, third nozzle) with different gas supply holes arranged at specific positions. Each nozzle supplies gas to different regions of the substrate, allowing independent control of gas distribution to achieve uniform reaction by-product distribution across the entire substrate surface.
Solution Approach 2:
Different regions of the substrate are supplied with different gas compositions and flow rates through the segmented nozzle system. The first gas, second gas, and adsorption inhibitory gas are supplied to specific locations based on the local requirements for film formation and reaction by-product management, ensuring uniform film thickness across different substrate positions.
2Manufacturing precision
If the gas supply system uses multiple nozzles with different gas types, then processing uniformity is improved, but the system complexity increases
Solution Approach 1:
Multiple gas supply functions are merged into an integrated nozzle system where the first nozzle, second nozzle, and third nozzle work together in a coordinated manner. The gas supply system combines the delivery of first gas, second gas, and adsorption inhibitory gas through a unified structural design, managing complexity through functional integration while maintaining processing uniformity.
3Manufacturing precision
If adsorption inhibitory gas is supplied to inhibit adsorption of the first gas, then film thickness variation is reduced, but the gas supply system becomes more complex
Solution Approach 1:
An adsorption inhibitory gas is introduced as an intermediary substance that prevents excessive adsorption of the first gas on the substrate surface. This intermediary gas mediates the reaction process by controlling the adsorption equilibrium, ensuring that reaction by-products are uniformly distributed and film thickness remains consistent across different substrate positions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances processing uniformity and reduces film thickness variations, improving the overall quality and consistency of films formed on substrates by controlling gas flow and adsorption inhibition.
Implementation Method 1
a third nozzle provided with one or more third gas supply holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the one or more substrates
Data Source
AI summary
There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively.


