Substrate Oxide Removal Using Nitrogen Plasma and Hydrogen
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Solution Overview
Problem
Existing substrate processing methods are inefficient in removing natural oxide films formed on substrates, leading to increased production costs and ineffective film removal due to reformation during transfer processes.
Innovation Solution
A substrate processing method involving the use of a nitrogen-containing gas and a hydrogen-containing gas, activated in a plasma generator, to effectively remove oxide films from substrates. The gases are supplied simultaneously onto the substrate, allowing for efficient reaction with the oxide film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a wet cleaning process is performed in a separate device to remove the natural oxide film, then the oxide film removal capability is improved, but the production cost increases due to adding high price devices
Solution Approach 1:
The patent combines the oxide film removal function with the existing thin-film deposition device by integrating a plasma generator into the deposition chamber. This allows the same device to perform both deposition and cleaning functions, eliminating the need for separate wet cleaning equipment and reducing overall system complexity and cost.
Solution Approach 2:
The deposition device is designed to perform multiple functions: it can deposit thin films using silicon-containing gas and remove oxide films using nitrogen-containing plasma. This multi-functional approach eliminates the need for dedicated separate devices, reducing production costs while maintaining effective oxide film removal capability.
2Manufacturing precision
If the substrate is transferred after cleaning to perform thin-film deposition, then the deposition process can be performed, but the natural oxide film is formed again on the surface during transfer
Solution Approach 1:
The patent combines the oxide film removal process and thin-film deposition process into a single continuous operation within the same vacuum chamber. By performing both cleaning and deposition without breaking vacuum or transferring the substrate, the system prevents re-formation of oxide films while maintaining high deposition quality.
Solution Approach 2:
The patent implements a continuous process where oxide film removal by nitrogen plasma is immediately followed by thin-film deposition without interrupting the vacuum environment. This continuous action prevents exposure to atmosphere that would cause oxide re-formation, ensuring both effective cleaning and high-quality deposition.
3Productivity
If nitrogen-containing gas and hydrogen-containing gas are supplied simultaneously onto the substrate, then the process time is reduced, but the gas activation and reaction control becomes more complex
Solution Approach 1:
The patent activates the nitrogen-containing gas in the plasma generator before it contacts the substrate, creating reactive nitrogen plasma in advance. This preliminary activation ensures that when the gas reaches the substrate, it is already in a highly reactive state capable of immediate oxide film removal, reducing the overall process time while maintaining controlled reaction conditions.
Solution Approach 2:
The plasma generator acts as an intermediary device that simplifies the complex task of simultaneous gas activation and supply. It pre-processes the nitrogen-containing gas through plasma generation, then delivers the activated gas to the substrate along with hydrogen-containing gas, managing the complexity of gas reactions outside the main deposition chamber.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method quickly removes natural oxide films, reducing process time and preventing reformation, thereby enhancing the quality of semiconductor and display device manufacturing processes.
Implementation Method 1
activating the nitrogen-containing gas in the inner space
Implementation Method 2
allowing the nitrogen-containing gas and the hydrogen-containing gas to react with an oxide film formed on the substrate to remove the oxide film
Data Source
AI summary
The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for removing an oxide film formed on a substrate. In accordance with an exemplary embodiment, a substrate processing method that processes a substrate loaded into a chamber, includes: supplying a nitrogen-containing gas to an inner space of a plasma generator disposed outside the chamber; activating the nitrogen-containing gas in the inner space; supplying a hydrogen-containing gas to the inner space; and supplying the nitrogen-containing gas activated in the inner space and the hydrogen-containing gas onto the substrate.