Supporting Substrate Thermal-Electrical Pass Without Electroplating
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Solution Overview
Problem
The existing supporting substrates for semiconductor light emitting devices face issues with parasitic capacitance, current leakage, and thermal expansion, particularly when used in high-power, high-temperature, and high-pressure environments, due to the limitations of silicon bases and electroplated conductive parts, which lead to manufacturing defects and increased costs.
Innovation Solution
The use of rod-shaped or wire-shaped ferromagnetic inserts, combined with a sintered composite substrate and a fixation substance, to create a stable and compact thermal and electrical pass within the substrate, eliminating the need for electroplating and addressing thermal expansion issues, while ensuring high melting points and effective heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a silicon base is used as the supporting substrate, then the substrate can provide mechanical support, but parasitic capacitance is generated between the silicon base and conductive part during high power usage, causing current leakage
Solution Approach 1:
The patent extracts the harmful electrical properties of silicon by replacing the silicon base with a ceramic substrate that has superior electrical insulation properties. This substitution removes the source of parasitic capacitance while maintaining the mechanical support function, thereby eliminating current leakage issues during high power operation.
Solution Approach 2:
The patent employs a composite structure consisting of a ceramic substrate combined with metal inserts and conductive parts. This composite material approach allows the ceramic to provide electrical insulation and mechanical strength, while metal components provide thermal and electrical conductivity, achieving a balance between electrical isolation and functional performance.
2Ease of manufacture
If a silicon base is used as the supporting substrate, then the substrate can be manufactured, but the melting point of silicon is not high enough (around 1414°C) to retain stable physical properties in high temperature operations, and the base may develop cracks due to difference in thermal expansion coefficients
Solution Approach 1:
The patent changes the fundamental material parameter of the substrate from silicon to ceramic, which has a significantly higher melting point and better thermal stability. This parameter change enables the substrate to maintain its physical properties at high temperatures and resist thermal expansion-induced cracking, thereby improving reliability in high temperature operations.
3Ease of manufacture
If electroplating is used to create the conductive part, then the conductive part can be formed, but metals used for electroplating expand when heated, making it difficult to compactly pack such electroplating materials into elongated grooves, resulting in defects and increased manufacturing costs
Solution Approach 1:
The patent replaces the electroplating process with a mechanical insertion method. Metal inserts are precisely formed and then mechanically inserted into elongated grooves on the ceramic substrate. This mechanical approach eliminates the thermal expansion issues associated with electroplating, allows for precise positioning and compaction into grooves, and reduces manufacturing defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution prevents cracking and separation between the semiconductor device and the substrate, reduces parasitic capacitance, and maintains stable physical properties at high temperatures, enhancing the reliability and manufacturing efficiency of the supporting substrate.
Implementation Method 1
compressing the material inwards from both ends of the groove, using a compressing means
Implementation Method 2
a sintered composite substrate
Implementation Method 3
a fixation substance
Data Source
AI summary
Disclosed is a method for manufacturing a supporting substrate for a semiconductor light emitting device, the method including: preparing a substrate having a groove; introducing a material into the groove of the substrate, the material serving to form a thermal and/or electrical pass; and compressing the material inwards from both ends of the groove, using a compressing means.