Substrate Pattern Control via Reaction Layer Temperature Tuning
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Solution Overview
Problem
Existing substrate processing methods struggle to control patterns on substrates to a desired state, particularly in achieving precise control over pattern shape and dimensions.
Innovation Solution
A substrate processing method involving the formation of a film on a mask, followed by the creation of a reaction layer on the film's surface and its subsequent removal using energy application, such as heating or plasma treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a natural oxide film is removed by reacting processing gas and heating to sublimate the reaction layer, then the oxide film removal is achieved, but the pattern control precision is insufficient
Solution Approach 1:
The patent segments the pattern control process into multiple sequential steps: forming a film on the mask, forming a reaction layer on the film surface, and selectively removing the reaction layer. This segmentation allows each step to be optimized independently, achieving precise pattern control while managing process complexity systematically
Solution Approach 2:
The patent applies preliminary action by forming a film on the mask before forming the reaction layer. This preparatory step creates a controlled surface that enables subsequent precise reaction layer formation and removal, thereby improving pattern control precision before the actual etching occurs
2Manufacturing precision
If processing gas is reacted with the natural oxide film to form a reaction layer, then the oxide film is etched, but the pattern shape and dimension control is inadequate
Solution Approach 1:
The patent introduces a film as an intermediary layer between the mask and the reaction layer. This intermediary film provides a controlled interface for reaction layer formation, enabling precise pattern shape and dimension control while maintaining process feasibility through standardized film formation and removal steps
Solution Approach 2:
The patent utilizes parameter changes by controlling the formation and removal of the reaction layer through varying processing conditions such as temperature, gas composition, and exposure time. These parameter adjustments enable precise control of pattern shape and dimensions while keeping the overall process approach simple and manufacturable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise control of the pattern formed on the substrate, enabling the achievement of desired shape and dimension specifications.
Implementation Method 1
a heating unit configured to apply heat to the reaction layer formed on the mask, thereby removing the reaction layer
Data Source
AI summary
A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.