Substrate Pattern Transfer Using Tin Mask Trimming and Plasma Etching
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Solution Overview
Problem
Existing substrate processing methods face challenges in uniformly transferring and maintaining the dimensions and shape of opening patterns in carbon-containing films due to defects in tin-containing films, leading to issues like line edge roughness and line width roughness.
Innovation Solution
A method involving first etching using a tin-containing film as a mask to transfer the opening pattern to an intermediate film, followed by second etching with a plasma formed from a processing gas containing hydrogen, halogen, or carbon and oxygen, while using trimming to correct sidewall defects in the tin-containing film before the first etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a tin-containing film is used as a mask to transfer the opening pattern to the intermediate film, then the opening pattern can be transferred, but defects in the tin-containing film cause line edge roughness and line width roughness
Solution Approach 1:
The patent applies trimming processing before the etching step to remove defects from the sidewalls of the tin-containing film. This preliminary action eliminates protrusions and irregularities that would otherwise be transferred to the intermediate film and carbon-containing film during etching, thereby preventing line edge roughness and line width roughness while maintaining the opening pattern transfer
Solution Approach 2:
The patent replaces the conventional approach of directly etching the carbon-containing film through the tin-containing film mask with a two-step process: first trimming the tin-containing film sidewalls using plasma processing, then etching the intermediate film and carbon-containing film. This substitution of the mechanical masking process with plasma-based trimming eliminates defect transfer and improves pattern uniformity
2Ease of manufacture
If the tin-containing film is removed separately after etching, then the film can be cleaned, but the process complexity and time increase
Solution Approach 1:
The patent combines the tin-containing film removal step with the second etching step by using the same plasma processing gas (containing oxygen). The plasma simultaneously etches the carbon-containing film through the intermediate film mask and removes the tin-containing film, eliminating the need for a separate removal step and reducing process complexity and time
Solution Approach 2:
The second plasma processing step serves multiple functions: it etches the intermediate film, etches the carbon-containing film using the intermediate film as a mask, and removes the tin-containing film. This multi-functional approach simplifies the overall process and improves productivity by consolidating multiple operations into a single step
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method ensures uniformity of the opening pattern in the carbon-containing film by correcting defects, reducing line edge roughness and line width roughness, and improving throughput by eliminating the need for separate tin-containing film removal steps.
Implementation Method 1
performing second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask
Implementation Method 2
the processing gas including hydrogen, halogen or carbon, and oxygen
Data Source
AI summary
One exemplary embodiment provides a substrate processing method. The method includes: providing a substrate, the substrate including a carbon-containing film, an intermediate film on the carbon-containing film, and a tin-containing film on the intermediate film, the tin-containing film having an opening pattern; first etching, the first etching including etching the intermediate film using the tin-containing film as a mask to transfer the opening pattern to the intermediate film; and second etching, the second etching using a plasma formed from a processing gas to remove the tin-containing film and etch the carbon-containing film using the intermediate film as a mask, the processing gas including hydrogen, halogen or carbon, and oxygen.