Substrate Patterning with Selective Passivation and Etch-Stop Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in forming advanced features with small critical dimensions due to the difficulty in controlling etch-stop layer thickness, which affects the accuracy of patterning processes.
Innovation Solution
A method involving the selective deposition of a conformal passivation layer and an etch-stop layer on a substrate, using cyclic deposition processes to enhance the accuracy and precision of patterning, particularly for features with small critical dimensions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If etch-based processes are used to form narrow structures with small critical dimensions, then feature density can be increased, but the control of etch-stop layer thickness becomes increasingly challenging
Solution Approach 1:
The patent segments the patterning process into distinct stages: first depositing a conformal passivation layer on the first material, then selectively depositing an etch-stop layer on the second material relative to the passivation layer. This segmentation allows independent control of each layer's thickness and position, resolving the difficulty of controlling etch-stop layer thickness while maintaining high patterning accuracy for small critical dimensions.
Solution Approach 2:
The passivation layer serves as an intermediary between the first material and the etch-stop layer. By selectively depositing the etch-stop layer on the second material relative to the passivation layer, the passivation layer mediates the interaction between different materials, enabling precise control over where the etch-stop layer forms and its thickness, thereby improving patterning accuracy without increasing process complexity.
2Productivity
If feature density is increased beyond that achievable with simple lithography steps, then smaller features can be formed, but the control of etch-stop layer thickness remains a challenge
Solution Approach 1:
The patent applies preliminary action by first depositing the conformal passivation layer on the first material before depositing the etch-stop layer on the second material. This preliminary step establishes a controlled surface profile that guides subsequent etch-stop layer deposition, enabling high feature density while maintaining precise thickness control through the pre-established passivation layer geometry.
Solution Approach 2:
The patent utilizes parameter changes by selectively depositing the etch-stop layer on the second material relative to the passivation layer, changing the deposition parameters (selectivity, thickness) based on the underlying material structure. This allows optimization of etch-stop layer thickness control for high feature density applications where small critical dimensions require precise thickness management.
3Ease of manufacture
If conventional patterning techniques are used, then existing processes can be maintained, but the accuracy of patterning for small critical dimensions deteriorates
Solution Approach 1:
The patent merges multiple functions into a unified approach: the conformal passivation layer serves both as a protective layer and as a guide for selective etch-stop layer deposition. By combining these functions, the process maintains relative simplicity while significantly improving patterning accuracy for small critical dimensions through the integrated design of passivation and etch-stop layer deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the accuracy of patterning processes, reduces costs, and increases throughput while allowing for smaller feature sizes in semiconductor device manufacturing.
Implementation Method 1
the passivation layer is deposited by a cyclic process. the cyclic process of depositing the passivation layer comprises providing a first passivation material precursor and a second passivation material precursor alternately and sequentially into the reaction chamber
Implementation Method 2
the etch-stop layer is deposited by a cyclic deposition process. the cyclic deposition process for the etch-stop layer comprises providing a first etch-stop material precursor and a second etch-stop material precursor into the reaction chamber alternately and sequentially
Data Source
AI summary
The disclosure relates to the manufacture of semiconductor devices, especially to methods and processing assemblies for forming a patterned structure on a substrate. The methods comprise providing the substrate comprising a first structure into a reaction chamber, wherein a surface of the first structure comprises a first material and the substrate comprises a second material, and selectively depositing a conformal passivation layer on the first material relative to the second material to cover the first structure, and selectively depositing an etch-stop layer on the second material relative to the passivation layer. In some embodiments, a multiple patterning or a tone reversal of a pattern may be performed using the methods and deposition assemblies of the disclosure.