Semiconductor Substrate With Photoimageable Dielectric Center Layer
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Solution Overview
Problem
The challenge in manufacturing semiconductor substrates with increasing I/O connections is the difficulty in achieving high bonding pad density without increasing the size of semiconductor packages, which leads to issues like imprecise line widths and reduced yield due to etching complications and warpage risks.
Innovation Solution
The use of a photoimageable dielectric material for the center layer pattern, formed by exposure without etching compensation, allows for precise width and flexibility in pattern design, enabling fine lines and increased I/O connections, while maintaining a symmetrical structure to reduce warpage risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If bonding pad density is increased to accommodate more I/O connections, then the number of I/O connections is improved, but the manufacturing precision deteriorates due to etching complications and warpage risks
Solution Approach 1:
The patent transitions from planar 2D circuit routing to 3D stacked conductive structures with multiple dielectric layers. By embedding circuit layers within dielectric layers and creating vertical interconnections, the design achieves higher I/O connection density without increasing the substrate footprint, thereby maintaining manufacturing precision while accommodating more connections.
Solution Approach 2:
The patent implements nested conductive structures where circuit layers are embedded within dielectric layers, and multiple conductive elements are nested within each other. This nested arrangement allows dense packing of I/O connections while maintaining precise dimensional control, avoiding the etching complications that arise from high-density planar routing.
2Quantity of substance
If bonding pad density is increased to accommodate more I/O connections, then the number of I/O connections is improved, but the reliability deteriorates due to warpage risks
Solution Approach 1:
The patent employs composite material structures with multiple dielectric layers having different material compositions. This composite approach allows optimization of thermal expansion coefficients and mechanical properties to reduce warpage, while the layered structure provides inherent stress distribution that enhances substrate reliability under high I/O connection density.
Solution Approach 2:
By distributing conductive structures across multiple vertical layers rather than concentrating them in a single plane, the patent reduces localized stress concentrations that cause warpage. The three-dimensional arrangement balances mechanical stresses more effectively, improving substrate reliability while accommodating increased I/O connections.
3Quantity of substance
If semiconductor chip size is increased to accommodate more I/O connections, then the number of I/O connections is improved, but the area is increased leading to higher cost
Solution Approach 1:
The patent utilizes vertical stacking of conductive and dielectric layers to increase I/O connection capacity without expanding the substrate's planar footprint. This three-dimensional architecture allows more connections to be packed into the same area, reducing substrate size and associated costs while maintaining high I/O density.
Solution Approach 2:
By nesting multiple circuit layers within dielectric layers and creating vertical interconnections, the patent achieves high I/O connection density within a compact substrate area. This nested configuration maximizes the use of available space, eliminating the need for larger substrate areas to accommodate increased connection counts.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a substrate with enhanced I/O pitch and connection density, improved yield, and reduced warpage, enabling more efficient and compact semiconductor package designs.
Implementation Method 1
The use of a photoimageable dielectric material for the center layer pattern, formed by exposure without etching compensation
Data Source
AI summary
A substrate includes a first conductive structure, a second conductive structure attached to the first conductive structure and a third conductive structure attached to the second conductive structure. The first conductive structure includes a first dielectric layer and a first circuit layer embedded in the first dielectric layer. The second conductive structure includes at least one second dielectric layer disposed on a second surface of the first dielectric layer and at least one second circuit layer embedded in the second dielectric layer. The third conductive structure includes a third dielectric layer disposed on the second conductive structure and a third circuit layer disposed on the third dielectric layer. A material of the second dielectric layer is different from the a material of the first dielectric layer and a material of the third dielectric layer.