Substrate Placement Modeling for Etch Tilt Reduction
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Solution Overview
Problem
Substrate processing in semiconductor fabrication facilities faces challenges in achieving consistent quality due to variations in substrate placement within processing chambers, leading to issues like excessive tilt and scrapping of substrates, which are not effectively addressed by existing technologies.
Innovation Solution
A system and method that utilize substrate measurement systems to generate surface profile maps, determine etch rates, and process this data using models to recommend optimized substrate placements, accounting for chamber component conditions and adjusting robot settings for improved substrate handling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If substrates are placed in process chambers for processing, then substrate processing can be performed, but varying quality of product and substrate scrapping occur due to placement variations
Solution Approach 1:
The system performs preliminary actions by measuring substrates before processing, generating surface profile maps in advance, and determining optimal placement locations before the substrate is actually processed. This allows the substrate to be positioned at the optimal location determined by the model, preventing quality variations and scrapping before they occur.
Solution Approach 2:
The system implements feedback by measuring the substrate's surface profile after processing, comparing it against target specifications, and using this information to iteratively improve placement optimization. The model learns from actual processing results to refine future placement recommendations, creating a closed-loop system that continuously improves product quality consistency.
2Ease of manufacture
If existing substrate processing methods are used, then processing can be performed, but excessive tilt and scrapping occur due to placement issues
Solution Approach 1:
The system enables self-service by allowing the substrate to effectively 'select' its optimal placement location through the measurement and modeling process. The substrate's unique surface profile characteristics are measured and used to determine where it should be placed for optimal processing, making the system adaptive to each individual substrate rather than requiring manual intervention for each placement decision.
Solution Approach 2:
The system changes parameters by transitioning from fixed, predetermined placement locations to dynamic, substrate-specific placement optimization. The model adjusts placement parameters based on measured surface profile data, etch rate variations, and processing conditions, allowing the optimal placement location to vary for each substrate based on its unique characteristics.
3Device complexity
If substrate placement is not optimized, then processing can proceed without complex adjustments, but tilt and scrapping increase
Solution Approach 1:
The system introduces an intermediary computational model that acts as a mediator between the substrate measurement data and the placement decision. Rather than directly manipulating the substrate or requiring complex mechanical adjustment systems, the model serves as an intelligent intermediary that processes measurement data and recommends optimal placement locations, reducing the need for complex physical adjustment mechanisms.
Solution Approach 2:
The system replaces mechanical placement adjustment mechanisms with a computational approach. Instead of using complex mechanical systems to physically adjust substrate placement during processing, the system uses measurement data and computational models to determine optimal placement locations beforehand, substituting mechanical complexity with information processing and algorithmic optimization.
Data Source
AI summary
A computer readable medium includes instructions that, when executed by a processing device, cause the processing device to perform operations. Operations include processing a first substrate in a process chamber while the first substrate is supported by a substrate support at a first placement location. The first substrate includes a first surface profile after processing. Operations further include generating a first surface profile map of the first surface profile using a substrate measurement system. Operations further include determining a plurality of etch rates corresponding to a plurality of locations on the first substrate. Operations further include processing data associated with the plurality of etch rates using a model that is to output one or more estimated surface profiles associated with one or more estimated placement locations. Operations further include determining a recommended placement for substrates on the substrate support based on the one or more estimated placement locations.