Substrate Placing Table Thermal Control for Wafer Uniformity

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Solution Overview

Problem

Miniaturization of substrate processing containers for semiconductor wafers leads to challenges in uniform temperature adjustment across the wafer surface due to heat radiation issues from support structures, causing temperature discrepancies during chemical oxide removal processes.

Innovation Solution

A substrate placing table with a stage, a support table, and a temperature adjusting plate that minimizes heat radiation by using heat medium flow channels and strategically formed gaps to control temperature, ensuring uniform heat distribution and management.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of stationary object

If the placing table is miniaturized to reduce processing container size, then the processing container volume is reduced, but the temperature uniformity of the wafer deteriorates due to heat radiation from support structures

Engineering Contradiction:
Improveprocessing container volumeVSAvoidtemperature uniformity of wafer
Core Design Contradiction:
Volume of stationary objectVSTemperature

Solution Approach 1:

A temperature adjusting plate is introduced as an intermediary component between the support table and the stage. This plate actively manages heat transfer by providing a controlled thermal interface, preventing harmful heat radiation from the support table while maintaining necessary thermal conditions for uniform wafer processing.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The temperature of the heat radiation portion is actively adjusted and controlled. By changing the thermal parameters of the interface between support structures and the stage, the system maintains temperature uniformity across the wafer surface despite the miniaturized container geometry that would otherwise cause heat concentration.

Inventive Principle:
Principle #35Parameter changes

2Length of moving object

If the stage diameter is reduced to match wafer diameter for miniaturization, then the processing container size is reduced, but heat radiation from bolts and support table causes temperature differences on the stage

Engineering Contradiction:
Improvestage diameterVSAvoidtemperature distribution on stage
Core Design Contradiction:
Length of moving objectVSTemperature

Solution Approach 1:

The temperature adjusting plate serves as a thermal intermediary between the support table and the stage, decoupling the heat radiation path from the support structures. This mediator prevents direct heat transfer from bolts and support table to the stage, ensuring uniform temperature distribution even when the stage diameter is minimized to match the wafer size.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration allows for precise temperature control of the substrate placing table, reducing temperature variations and enabling consistent substrate processing even with reduced container sizes, thus improving processing efficiency and throughput.

Implementation Method 1

a heat medium flow channel is formed in a stage 30 to circulate a heat medium of a predetermined temperature through the stage 30

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Implementation Method 2

including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Data Source

PatentUS11171033B2Substrate placing table
Publication Date: 2021.11.09 TOKYO ELECTRON LTD
  • US11171033B2 patent drawing
  • US11171033B2 patent drawing
  • US11171033B2 patent drawing

AI summary

A substrate placing table, which is installed inside a processing container for processing a wafer, includes: a stage configured to place a wafer on an upper surface thereof and including an inner peripheral flow channel and an outer peripheral flow channel formed therein to circulate a heat medium of a predetermined temperature therethrough; a support table configured to support the stage; and a temperature adjusting plate installed between the stage and the support table, and including a temperature adjusting mechanism configured to adjust a temperature of a heat radiation portion at which heat is radiated between the stage and the support table.