Semiconductor Substrate Planarization Using a Buried Insulating Pattern
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Solution Overview
Problem
In semiconductor manufacturing, precise control of substrate thickness variation is crucial for ensuring proper alignment and functionality of layers in miniaturized devices, but existing methods lack effective precision in planarizing both the front and backside of substrates.
Innovation Solution
A semiconductor device design featuring a substrate with cell and dummy regions, including active patterns, gate structures, and buried insulating patterns, where the buried insulating pattern penetrates the substrate and serves as an etch stop layer to control thickness variation by being recessed to the same plane as the upper surface, facilitating precise planarization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional planarization methods are used, then manufacturing process is simple, but substrate thickness variation cannot be precisely controlled
Solution Approach 1:
A buried insulating pattern is formed within the substrate before subsequent processing steps. This pre-formed structure serves as an etch stop layer and thickness reference that enables precise control of substrate thickness variation during planarization, preventing the need for complex post-processing adjustments
Solution Approach 2:
The buried insulating pattern acts as an intermediary element between the substrate and the planarization process. By introducing this intermediate structure, the patent enables precise thickness control without requiring direct complex control mechanisms, as the insulating pattern mediates the interaction between etching processes and substrate thickness
Data Source
AI summary
There is provided a semiconductor device in which thickness variation of a substrate is precisely controlled. The semiconductor device includes a substrate comprising cell regions, a dummy region between the cell regions, an upper surface and a lower surface opposite the upper surface in a first direction, an active pattern disposed on the upper surface of the substrate, the active pattern comprising a lower pattern extending in a second direction crossing the first direction and a plurality of sheet patterns spaced apart in the first direction from each other, the plurality of sheet patterns being disposed in the cell region, a source/drain pattern disposed between the gate structures adjacent to each other, and a buried insulating pattern penetrating the substrate and the lower pattern in the dummy region.