Substrate Plasma Processing with Ballast Gas Pressure Control
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Solution Overview
Problem
Existing substrate processing methods, such as ALD and ALE using plasma, take too long to reach the desired pressure for forming plasma, affecting throughput and film quality.
Innovation Solution
Introduce a ballast gas into the exhaust pipe to quickly regulate the pressure in the processing container during the substrate processing, allowing for rapid formation of plasma by alternating gas supply and discharge cycles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If conventional substrate processing methods are used without ballast gas introduction, then the system structure remains simple, but the time to reach desired pressure is too long
Solution Approach 1:
A ballast gas introduction mechanism is introduced as an intermediary component in the exhaust pipe. This mechanism includes a ballast gas supply source and a flow rate control valve that regulate the ballast gas flow. The ballast gas acts as a mediator to rapidly adjust the pressure in the processing container by being mixed with the exhaust gas flow, thereby solving the contradiction between simplicity and speed without requiring complex vacuum pump changes
2Productivity
If ballast gas is introduced into the exhaust pipe, then the pressure regulation speed is significantly improved, but the device complexity increases
Solution Approach 1:
The ballast gas introduction mechanism is designed to serve multiple functions: it rapidly regulates pressure during plasma formation, maintains stable pressure during film formation, and can be integrated with existing exhaust pipe structures. The flow rate control valve enables the system to adapt to different processing requirements by adjusting ballast gas flow rates, making the system universally applicable to various substrate processing scenarios without requiring separate systems for each function
3Speed
If ballast gas flow rate is increased to quickly reach desired pressure, then the pressure regulation speed improves, but the energy consumption increases
Solution Approach 1:
The ballast gas flow rate is dynamically adjusted based on the processing stage and pressure requirements. During plasma formation, when rapid pressure adjustment is needed, the flow rate control valve increases ballast gas flow to achieve quick pressure stabilization. During film formation, the flow rate is reduced to maintain stable pressure conditions. This dynamic adjustment optimizes the balance between pressure regulation speed and energy consumption, avoiding continuous high energy input
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required to achieve the desired pressure, improving throughput and enabling precise control over film formation, whether isotropic or anisotropic, thus enhancing film quality and efficiency.
Implementation Method 1
introducing a ballast gas into the exhaust pipe
Implementation Method 2
forming plasma of the processing gas supplied into the processing container
Data Source
AI summary
A substrate processing method for performing a predetermined process on a substrate includes performing, a plurality of times, a cycle including (a) supplying a first processing gas into a processing container to which an exhaust pipe is connected and which accommodates the substrate and (b) supplying a second processing gas into the processing container, wherein at least one of (a) and (b) includes (c) introducing a ballast gas into the exhaust pipe and forming plasma of the processing gas supplied into the processing container.