Substrate Plasma Processing Sequence to Suppress Gas Interference
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Solution Overview
Problem
The influence of plasma-excited gases other than the processing gas on substrate processing during semiconductor manufacturing is not adequately addressed in existing technologies.
Innovation Solution
A method involving the sequential supply and plasma-excitation of multiple gases through distinct suppliers and nozzles, with intermediate purging in a non-plasma atmosphere, to minimize interference and unintended reactions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple gases are supplied into the process chamber from multiple suppliers and plasma-excited, then the substrate processing can be performed with diverse processing gases, but gases other than the intended processing gas may also be plasma-excited and affect the substrate processing
Solution Approach 1:
The gas supply system is segmented into multiple independent suppliers (first supplier, second supplier, third supplier) each capable of supplying specific processing gases. This segmentation allows precise control over which gases are supplied from which supplier, enabling the system to supply diverse processing gases while preventing unintended gases from being plasma-excited by controlling the plasma excitation timing to match only the intended processing gas supply periods.
Solution Approach 2:
The system performs preliminary actions by sequentially supplying different processing gases from different suppliers before plasma excitation occurs. The first processing gas is supplied from the first supplier, then purged, then the second and third processing gases are supplied from the second and third suppliers respectively. This preliminary gas supply and purging sequence ensures that only the intended processing gas is present in the chamber when plasma excitation occurs, preventing unintended plasma excitation of other gases.
2Productivity
If processing gases are supplied from multiple suppliers simultaneously, then processing efficiency can be improved, but unintended reactions and particle generation may occur due to plasma excitation of wrong gases
Solution Approach 1:
The system employs periodic action through sequential gas supply and purging cycles. The first processing gas is supplied from the first supplier for a first period, then purged from the process chamber. Subsequently, the second processing gas is supplied from the second supplier for a second period, followed by purging. Finally, the third processing gas is supplied from the third supplier for a third period. This periodic sequence ensures that each processing gas is supplied and purged in distinct time periods, preventing unintended reactions and particle generation while maintaining high processing efficiency through automated sequential operation.
3Adaptability or versatility
If plasma excitation is applied to multiple gases from multiple suppliers, then comprehensive substrate treatment can be achieved, but the influence of plasma-excited other gases on substrate processing cannot be suppressed
Solution Approach 1:
The system uses purging as an intermediary action between gas supply periods. After the first processing gas is supplied from the first supplier, a purging step removes it from the process chamber before the second processing gas is supplied from the second supplier. Similarly, after the second processing gas is supplied, another purging step removes it before the third processing gas is supplied from the third supplier. This intermediary purging action ensures that only the intended processing gas remains in the chamber during plasma excitation, suppressing plasma excitation interference while maintaining comprehensive substrate treatment capability through the sequence of different processing gases.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses the impact of plasma-excited gases on substrate processing, reducing particle generation and unintended reactions, thereby enhancing processing precision and efficiency.
Implementation Method 1
plasma-exciting the second processing gas inside the process chamber; plasma-exciting the third processing gas inside the process chamber
Data Source
AI summary
There is provided a technique that includes: (a) supplying a first processing gas from a first supplier into a process chamber in which the substrate is accommodated, while not supplying the first processing gas into the process chamber from a second supplier different from the first supplier; (b) supplying a second processing gas into the process chamber from each of the first supplier and the second supplier, and plasma-exciting the second processing gas inside the process chamber; and (c) supplying a third processing gas, which has a composition different from that of the second processing gas, into the process chamber from each of the first supplier and the second supplier, and plasma-exciting the third processing gas inside the process chamber.