Substrate Processing Apparatus Plasma Oxidation Control
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Solution Overview
Problem
Conventional semiconductor device manufacturing methods can unintentionally oxidize substrates and result in uneven heating of their surfaces, leading to processing inconsistencies.
Innovation Solution
A substrate processing apparatus with a process chamber, multiple support units, gas supply, heating, and excitation systems that control the introduction of reducing and oxidizing gases to prevent oxidation and ensure even heating by using a magnetron-type plasma source and specific gas management protocols.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a substrate is heated in a conventional single support configuration, then heating efficiency is improved, but unintentional oxidation of the substrate occurs
Solution Approach 1:
The substrate support system is segmented into two separate support units positioned at different heights within the process chamber. This segmentation allows independent control of heating and gas exposure conditions for each support unit, enabling efficient heating while preventing unwanted oxidation through spatial separation of functions.
2Device complexity
If a substrate is processed with conventional single support, then process simplicity is maintained, but uneven heating of substrate surfaces occurs
Solution Approach 1:
The invention transitions from a single-plane support configuration to a two-level vertical arrangement of support units. This dimensional change in the support structure enables simultaneous heating of both upper and lower substrate surfaces, achieving uniform temperature distribution across the entire substrate while maintaining relatively simple process control.
3Object-affected harmful factors
If oxidizing gas is supplied during substrate heating, then oxidation protection is achieved, but substrate oxidation occurs due to improper timing
Solution Approach 1:
The system performs preliminary action by supplying reducing gas to the first support unit before substrate oxidation can occur, and by pre-positioning the substrate on appropriate support units based on the required process step. This preliminary gas supply and support selection prevents oxidation issues before they arise during the main processing phase.
Solution Approach 2:
The gas supply system dynamically adjusts the type and timing of gas supply based on the substrate's position and processing stage. Reducing gas is supplied during heating phases, while oxidizing gas is supplied during processing phases, with the control unit coordinating gas supply with substrate position changes between the two support units.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents unintentional oxidation and achieves even heating of substrate surfaces, enhancing the consistency and quality of semiconductor device manufacturing processes.
Implementation Method 1
an excitation unit configured to excite the reducing gas and the oxidizing gas supplied into the process chamber
Implementation Method 2
a heating unit configured to heat the substrate
Implementation Method 3
supply the reducing gas into the process chamber by the gas supply unit while heating the substrate by the heating unit
Implementation Method 4
supply the oxidizing gas and the reducing gas into the process chamber by the gas supply unit while exciting the oxidizing gas and the reducing gas by the excitation unit
Data Source
AI summary
The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured to excite the gas supplied into the process chamber; an exhaust unit configured to exhaust the inside of the process chamber; and a controller. The controller controls a reducing gas to be supplied into the process chamber in a state in which the wafer is supported by the lifter pins, and controls the gas supply unit to supply an oxidizing gas and a reducing gas into the process chamber in a state in which the wafer is supported by the susceptor.