Substrate Plasma Treatment to Reduce Roughness and Particle Contamination
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Solution Overview
Problem
The challenge of reducing substrate surface roughness and damage during etching processes in fin-FET devices, while minimizing particle generation and contamination, is not adequately addressed by existing hydrogen plasma annealing methods.
Innovation Solution
A substrate treating apparatus and method that includes a process chamber with insulation members, a substrate support, gas supply, and plasma source, controlled to perform sequential or simultaneous steps of passivation gas and process gas supply, followed by plasma generation to treat substrates efficiently, protecting insulation components and reducing particle contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If hydrogen plasma annealing is applied to reduce substrate surface damage and roughness, then substrate surface quality is improved, but particle generation and contamination increase
Solution Approach 1:
The treatment process is divided into two distinct steps: first a passivation step using nitrogen-based plasma to protect insulation members, then a separate annealing step using hydrogen plasma to treat the substrate surface. This segmentation allows each step to perform its specific function without causing harmful side effects.
Solution Approach 2:
The passivation gas treatment is performed before the hydrogen plasma annealing. This preliminary action forms a protective state on insulation members that prevents particle generation during the subsequent hydrogen plasma step, while still allowing the substrate surface to be properly annealed.
2Manufacturing precision
If hydrogen plasma is used to heal substrate damage by making silicon atoms movable, then substrate surface roughness is reduced, but insulation components are damaged and particle contamination occurs
Solution Approach 1:
The process separates the substrate treatment function from the insulation member protection function into two sequential steps. The first step protects insulation members, while the second step treats the substrate surface, allowing both functions to be achieved without compromising either.
Solution Approach 2:
The passivation gas acts as an intermediary that temporarily protects insulation members during the treatment process. By introducing nitrogen-based gas first, it creates a protective environment that prevents direct damage to insulation components while allowing subsequent hydrogen plasma to safely treat the substrate.
3Manufacturing precision
If multiple treatment steps are performed to protect insulation members and reduce particle contamination, then substrate quality is improved, but process time increases
Solution Approach 1:
The passivation and annealing processes are merged into a single continuous treatment cycle within the same reaction chamber. By combining these steps and optimizing the transition between them, the system achieves comprehensive substrate treatment and insulation protection without requiring separate processing equipment or extensive intermediate steps.
Solution Approach 2:
The process maintains continuous useful action by seamlessly transitioning from passivation gas supply to hydrogen plasma generation without interrupting the treatment cycle. The controller manages the gas supply and plasma source to ensure uninterrupted processing, maximizing productivity while maintaining high substrate quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively improves substrate surface quality by removing impurities and reducing roughness, while protecting insulation components and increasing production volume per unit time.
Implementation Method 1
a plasma source exciting a gas into a plasma
Implementation Method 2
a first step of supplying the passivation gas and the process gas to the reaction space simultaneously or sequentially
Implementation Method 3
making silicon atoms on the surface of the channel movable by radical hydrogen
Data Source
AI summary
A substrate treating apparatus includes a process chamber having a reaction space with one or more insulation members exposed to the reaction space; a substrate support member supporting a substrate at the reaction space; a gas supply member selectively supplying a passivation gas and a process gas to the reaction space; a plasma source exciting a gas into a plasma; and a controller which controls the gas supply member and the plasma source, and after a substrate to be treated is taken into the reaction space and supported by the support member, the controller controls the gas supply member and the plasma source to supply the passivation gas and the process gas to the reaction space simultaneously or sequentially, and generate a plasma in the reaction space under the condition of stopping a supply of the passivation gas but supplying the process gas.