Substrate Transport Position Deviation Detection via Temperature Gradient Etching

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Solution Overview

Problem

In substrate processing apparatuses, it is challenging to accurately quantify the relative positional deviation between an electrostatic chuck (ESC) and a substrate due to non-uniform RF or temperature characteristics, leading to in-plane non-uniformity in etching rates and shapes.

Innovation Solution

A method involving setting the substrate support surface to a uniform temperature, etching a target film, and then applying a concentric temperature gradient to detect deviations by calculating differences in etching rates, allowing for precise determination of positional deviations between the ESC and the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If visual confirmation method is used to correct relative positional error, then operational simplicity is maintained, but measurement precision deteriorates

Engineering Contradiction:

Improveoperational simplicityVSAvoidpositional deviation detection accuracy

Core Design Contradiction:

Ease of operationVSMeasurement precision

Solution Approach 1:

The patent replaces the mechanical/visual inspection method with a plasma-based measurement system. By using etching rate variations caused by temperature gradients to detect positional deviations, the system substitutes direct visual confirmation with an indirect plasma physics-based measurement approach, achieving higher precision while maintaining operational simplicity through automated measurement and calculation

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the measurement parameter from visual observation to etching rate measurement. By measuring the etching rate at different radial positions and calculating deviations from the average, the system transforms an imprecise visual task into a quantifiable measurement process with higher precision, while the automated calculation maintains operational simplicity

Inventive Principle:

Principle #35Parameter changes

2Ease of operation

If chamber opening is required for position adjustment, then accessibility is improved, but productivity deteriorates

Engineering Contradiction:

Improveadjustment accessibilityVSAvoidprocessing efficiency

Core Design Contradiction:

Ease of operationVSProductivity

Solution Approach 1:

The patent replaces mechanical position adjustment (requiring chamber opening) with a calculation-based correction method. By measuring etching rates and calculating the positional deviation, then applying correction values to the control system, the patent achieves position adjustment without physical access to the chamber, maintaining productivity

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent introduces an intermediary measurement and calculation system between the physical position and the adjustment action. Instead of directly accessing and adjusting the physical position (requiring chamber opening), the system uses etching rate measurements as an intermediary to calculate deviations and applies corrections through the control system, eliminating the need to open the chamber

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables accurate detection and adjustment of the substrate transport position, effectively canceling deviations in etching rates and improving positional accuracy without requiring the opening of the plasma processing chamber.

Implementation Method 1

setting a temperature of the substrate support surface to the same temperature over an entire substrate support surface

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

setting the temperature of the substrate support surface to be concentrically and gradually increased from a central portion to a peripheral edge portion, or to be concentrically and gradually decreased from the central portion to the peripheral edge portion

Methodology Applied

Scientific EffectTemperature gradient: Temperature Gradient

Implementation Method 3

etching a first etching target film formed on a substrate disposed on the substrate support surface

Methodology Applied

Scientific EffectPlasma etching: Plasma

Data Source

PatentUS20230078310A1Method of detecting deviation amount of substrate transport position and substrate processing apparatus

Publication Date: 2023.03.16 TOKYO ELECTRON LTD

AI summary

A method of detecting a deviation amount of a substrate transport position includes: setting a temperature of a substrate support surface to the same temperature over an entire substrate support surface; etching a first etching target film formed on a substrate; acquiring a first etching rate that is an etching rate of the first etching target film; setting the temperature of the substrate support surface to be concentrically and gradually increased from a central portion to a peripheral edge portion; etching a second etching target film formed on the substrate, the second etching target film being same kind as the first etching target film; acquiring a second etching rate that is an etching rate of the second etching target film; calculating a difference between the acquired first etching rate and second etching rate; and calculating the deviation amount of the substrate transport position based on the calculated difference.