Semiconductor Processing Substrate Positioning for Film Uniformity
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Solution Overview
Problem
Current semiconductor processing techniques face challenges in achieving high planar uniformity of film thickness and quality due to temperature and gas concentration variations in vertical heat-processing apparatuses, leading to inefficiencies and prolonged teaching operations to optimize substrate mount positions.
Innovation Solution
A system and method that includes a process chamber, support member, exhaust section, gas supply, transfer device, measuring section, and information processing section to calculate positional corrections based on film thickness measurements, allowing for precise alignment and uniformity improvement by controlling the transfer device's operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a vertical heat-processing apparatus is used with a cylindrical heater, then the structure is simple and easy to manufacture, but temperature planar difference occurs on the target substrate leading to poor film thickness uniformity
Solution Approach 1:
The heating system is divided into multiple independent heating zones along the vertical direction. Each zone can be independently controlled to compensate for temperature variations at different positions, thereby eliminating the temperature planar difference that causes poor film thickness uniformity while maintaining a relatively simple overall structure.
Solution Approach 2:
Different heating zones are assigned different temperature control characteristics to match the local thermal requirements at various positions of the target substrate. This local optimization ensures uniform temperature distribution across the substrate surface, improving film thickness uniformity without requiring a completely complex heating system.
2Manufacturing precision
If film formation gas is supplied from the peripheral portion side, then the gas supply structure is simple, but film thickness uniformity deteriorates due to concentration variation across the substrate
Solution Approach 1:
The gas supply system is segmented into multiple supply points distributed across different regions of the process chamber. This segmentation allows gas to be supplied from multiple directions, reducing concentration gradients across the substrate and improving film thickness uniformity while keeping each individual supply point relatively simple.
Solution Approach 2:
The gas supply configuration uses asymmetric distribution of supply points and flow rates to compensate for the natural gas flow patterns in the chamber. By strategically placing supply points and adjusting asymmetric flow rates, uniform gas concentration is achieved across the substrate surface without requiring a completely symmetric or complex supply system.
3Manufacturing precision
If multiple teaching operations are performed to optimize substrate mount position, then film thickness uniformity can be improved, but processing time increases significantly
Solution Approach 1:
The system performs preliminary characterization of the temperature and gas concentration distributions during initial system setup or maintenance periods. This preliminary data is stored and used to pre-calculate optimal substrate mounting positions, eliminating the need for repeated time-consuming teaching operations while maintaining high film thickness uniformity.
Solution Approach 2:
The system implements a feedback mechanism where film thickness measurement data from previous runs is automatically analyzed, and the substrate mounting position is automatically adjusted for subsequent runs. This closed-loop feedback system achieves high uniformity with minimal teaching operations, significantly reducing the time loss associated with manual optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time and inefficiencies associated with teaching operations, enabling high planar uniformity and efficient semiconductor processing by uniformly supplying process gases and optimizing substrate positioning.
Implementation Method 1
the reaction tube is heated to a predetermined process temperature by a cylindrical heater disposed therearound
Implementation Method 2
which is then set to have a predetermined pressure-reduced atmosphere
Data Source
AI summary
A semiconductor process system (10) includes a measuring section (40), an information processing section (51), and a control section (52). The measuring section (40) measures a characteristic of a test target film formed on a target substrate (W) by a semiconductor process. The information processing section (51) calculates a positional correction amount of the target substrate (W) necessary for improving planar uniformity of the characteristic, based on values of the characteristic measured by the measuring section (40) at a plurality of positions on the test target film. The control section (52) controls a drive section (30A, 32A) of a transfer device (30), based on the positional correction amount, when the transfer device (30) transfers a next target substrate (W) to the support member (17) to perform the semiconductor process.