Substrate Preheating for Epoxy Deposition Control
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Solution Overview
Problem
The existing methods for depositing epoxy onto semiconductor substrates face challenges such as shape defects, uncertain epoxy quantity, and reduced production output due to issues like epoxy tailing and dripping, which affect the reliability and speed of the die bonding process.
Innovation Solution
A method and apparatus that preheat the substrate to a temperature between 25° C. and 60° C. to reduce epoxy viscosity, allowing for precise and controlled deposition of epoxy dots using a heating platform, an epoxy dispenser, and a pick head to ensure reliable bonding of semiconductor dies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate is preheated to reduce epoxy viscosity, then the wetting and deposition quality is improved, but the risk of epoxy tailing and dripping increases
Solution Approach 1:
The substrate is preheated before epoxy deposition to reduce epoxy viscosity and improve wetting. This preliminary thermal preparation enables better epoxy flow and adhesion while the heating platform maintains controlled temperature throughout the process to prevent harmful tailing and dripping effects
Solution Approach 2:
The temperature parameter of the substrate is changed from ambient to elevated (25-60°C) to modify the viscosity parameter of the epoxy material. This parameter transformation improves epoxy flow characteristics and wetting ability while the controlled heating prevents excessive viscosity reduction that would cause tailing and dripping
2Manufacturing precision
If the epoxy transfer speed is reduced to prevent tailing and dripping, then the deposition quality is improved, but the production output decreases
Solution Approach 1:
The temperature parameter of the substrate is elevated to modify the viscosity characteristics of the epoxy, enabling reliable deposition at higher transfer speeds. The thermal energy changes the epoxy's flow properties so that faster deposition does not result in tailing or dripping, thus maintaining quality while improving productivity
Solution Approach 2:
The substrate is preheated in advance to counteract the harmful effects of high-speed deposition. By preparing the thermal environment beforehand, the system prevents tailing and dripping that would normally occur at higher transfer speeds, allowing maintained or improved productivity without sacrificing deposition quality
3Stability of the object's composition
If high viscosity epoxy is used, then the epoxy maintains its position during transfer, but the wetting degree and deposition quality deteriorate
Solution Approach 1:
The temperature parameter of the substrate is changed to elevate the epoxy temperature during deposition, which transforms the viscosity parameter from high to optimal. This parameter transformation enables the epoxy to maintain position stability during transfer while achieving sufficient fluidity for good wetting and deposition quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability and speed of epoxy deposition, improving wetting and reducing defects like tailing and dripping, thereby increasing the yield and efficiency of the die bonding process while maintaining high deposition speeds.
Implementation Method 1
conducting preheating of the substrate with the heating platform to a temperature of between 25° C. and 60° C.
Implementation Method 2
a viscosity of the epoxy deposited is reduced
Data Source
AI summary
A semiconductor die is bonded using epoxy onto a substrate supported on a heating platform. After preheating the substrate with the heating platform to a temperature of between 25° C. and 60° C., an epoxy dispenser deposits an epoxy dot onto the substrate before the semiconductor die is placed onto the epoxy dot with a pick head to thereby bond the semiconductor die onto the substrate.