Semiconductor Substrate Preheating for Extended Cleaning Cycles
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Solution Overview
Problem
Current semiconductor manufacturing processes require frequent cleaning of processing chambers due to thin-film deposition on undesired surfaces, leading to inefficiencies and reduced yield, as existing dry cleaning methods are insufficient and wet cleaning methods necessitate chamber shutdown, pumping, and stabilization steps, wasting time and resources.
Innovation Solution
A method and apparatus where a substrate is preheated to a temperature higher than the processing temperature, then transferred to a processing chamber with a susceptor, where it is maintained at a predetermined height, allowing for thin-film deposition without additional heating, thereby minimizing contamination and extending the cleaning cycle by reducing deposition on chamber surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the susceptor is heated to deposit thin film on substrate, then the thin film deposition is achieved, but thin film is also deposited on undesired portions (inside walls of processing chamber, susceptor surfaces)
Solution Approach 1:
The substrate is preheated to the processing temperature before being transferred to the processing chamber. This preliminary heating action ensures that the substrate is already at the required temperature when it enters the chamber, eliminating the need to heat the susceptor and chamber during the deposition process, thereby preventing thin film deposition on undesired portions
Solution Approach 2:
The heating function is extracted from the processing chamber and susceptor, and transferred to a separate preheating unit. By removing the heating source from the deposition chamber, the patent eliminates the source of contamination on chamber surfaces while maintaining the necessary thermal conditions for thin film deposition on the substrate
2Reliability
If wet cleaning method is used to clean processing chamber, then cleaning effectiveness is improved, but apparatus must be turned off and additional pumping and stabilization steps are required
Solution Approach 1:
The patent converts the harmful effect of thin film deposition on chamber surfaces into a benefit by preventing it in the first place through substrate preheating. This eliminates the need for cleaning operations entirely, transforming the problem of contamination into a solution where no contamination occurs
Solution Approach 2:
By preventing contamination through preheating, the processing chamber can maintain continuous operation without interruption for cleaning. The useful action of thin film deposition continues uninterrupted, while the harmful cleaning cycles are eliminated
3Object-affected harmful factors
If cleaning is performed frequently to remove contamination, then contamination level is reduced, but productivity decreases due to chamber shutdown and stabilization time
Solution Approach 1:
The substrate is preheated before transfer to the processing chamber, which prevents thin film deposition on chamber surfaces. This preliminary action eliminates contamination at its source, allowing continuous production without frequent cleaning interruptions and maintaining high productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach extends the cleaning cycle of the processing chamber, improves the interfacial properties of the thin film, and enhances the deposition rate and uniformity, reducing contamination and increasing yield by minimizing deposition on chamber surfaces.
Implementation Method 1
preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor
Implementation Method 2
placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor
Implementation Method 3
forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber
Data Source
AI summary
A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.