Substrate Processing Apparatus Pressure Control for Etching Uniformity
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Solution Overview
Problem
Existing substrate processing technologies face challenges in maintaining uniform temperature across the surface of substrates during processing, leading to potential non-uniform cleaning and etching results due to temperature differences between the center and peripheral portions.
Innovation Solution
A substrate processing apparatus that includes a substrate holding part, a processing liquid supply system, a rotating mechanism, and a pressure control system to maintain a pressurized atmosphere, allowing continuous supply of processing liquids while rotating the substrate, and an optional heating system for reduced pressure drying, ensuring uniform temperature and processing across the substrate surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the cleaning solution is supplied onto the center portion of a rotating substrate under normal pressure, then the cleaning solution spreads toward the peripheral portion by centrifugal force, but the cleaning solution vapors during movement and the substrate temperature becomes non-uniform from center to periphery
Solution Approach 1:
The substrate is pre-heated to a predetermined temperature before the cleaning solution is supplied. This preliminary heating ensures that when the cleaning solution contacts the substrate, the substrate maintains a uniform temperature throughout the cleaning process, preventing the temperature non-uniformity that would otherwise occur due to vaporization during solution movement from center to periphery.
Solution Approach 2:
The invention changes the temperature parameter of the substrate by pre-heating it to a specific temperature range. This parameter change compensates for the cooling effect that occurs when the cleaning solution vaporizes during centrifugal movement, thereby maintaining uniform temperature across the substrate surface and ensuring consistent cleaning quality.
2Productivity
If the substrate is rotated at high speed in a reduced pressure atmosphere for drying, then drying efficiency is improved, but the complexity of the apparatus increases due to the need for pressure control mechanisms
Solution Approach 1:
The invention uses a reduced pressure atmosphere (vacuum environment) to facilitate rapid evaporation and drying of the substrate. By lowering the pressure, the drying process occurs more efficiently at lower temperatures and faster rates, improving productivity without requiring complex mechanical drying mechanisms.
Solution Approach 2:
The substrate is pre-heated before being placed in the reduced pressure atmosphere for drying. This preliminary heating accelerates the drying process by providing the energy needed for rapid evaporation in the vacuum environment, thereby improving drying efficiency while keeping the apparatus relatively simple.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves improved temperature uniformity and processing consistency by controlling pressure and rotation to maintain consistent liquid distribution and heating, enhancing the efficiency and uniformity of etching, rinsing, and drying processes.
Implementation Method 1
the cleaning solution is supplied onto a center portion of the substrate being rotated under normal pressure and the cleaning solution is spread toward a peripheral portion of the substrate by centrifugal force
Implementation Method 2
by supplying a processing liquid onto a substrate having a surface on which a resist pattern is formed... after bringing the inside of the sealed cover back to normal pressure
Implementation Method 3
a heating system for reduced pressure drying, ensuring uniform temperature and processing across the substrate surface
Implementation Method 4
a processing liquid supply part for supplying a processing liquid onto a center portion of the main surface of the substrate
Implementation Method 5
a chamber for containing the substrate holding part in an internal space thereof
Data Source
AI summary
In a substrate processing apparatus, with an internal space of a chamber brought into a pressurized atmosphere, an etching process is performed by continuously supplying a first processing liquid onto an upper surface of a substrate while rotating the substrate. It is thereby possible to suppress vaporization of the first processing liquid on the substrate and further suppress a decrease in the temperature of the substrate due to the heat of vaporization as it goes from a center portion of the substrate toward a peripheral portion thereof as compared with under normal pressure. As a result, it is possible to improve the uniformity in the temperature of the upper surface of the substrate during the etching process using the first processing liquid and improve the uniformity of etching over the entire upper surface of the substrate.