Substrate Processing Pressure Control for Oxide Film Uniformity
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Solution Overview
Problem
Conventional substrate-processing devices face challenges in maintaining constant pressure within the process chamber, leading to variations in oxide film thickness during thermal oxidization, which affects the quality of substrate processing.
Innovation Solution
A substrate-processing device equipped with a pressure-adjusting system that includes a first pressure-measuring instrument for maintaining constant internal pressure and a second for monitoring differential pressure, controlling the reactive gas supply based on these measurements to prevent pressure fluctuations, ensuring stable oxidization processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If pressure control is based on differential pressure measurement between inside and outside of process chamber, then the pressure control system is simple, but the inside pressure cannot be kept constant when outside pressure changes due to climate conditions
Solution Approach 1:
The patent divides the pressure measurement function into two independent measurement systems: one for inside pressure and one for outside pressure. This segmentation allows each measurement to be optimized for its specific purpose, with the inside pressure measurement directly controlling the pressure-adjusting valve to maintain constant processing conditions, while the outside pressure measurement enables differential pressure monitoring for safety control of the lid opening/closing operations.
Solution Approach 2:
The controller acts as an intermediary that receives inputs from both pressure measuring instruments and coordinates the pressure-adjusting valve and lid operations accordingly. It processes the inside pressure signal to maintain constant pressure during processing, and separately processes the differential pressure signal to control lid operations, thereby mediating between the two pressure measurement systems and the respective controlled elements.
2Device complexity
If only differential pressure measurement is used, then the system structure is simple, but lid opening and closing cannot be safely controlled based on pressure conditions
Solution Approach 1:
The patent segments the pressure control functions by providing separate measurement systems: one dedicated to inside pressure measurement for processing control, and another for differential pressure measurement specifically for lid operation safety. This segmentation ensures that lid operations are controlled based on appropriate pressure differential conditions, improving reliability without significantly increasing overall system complexity.
3Device complexity
If reactive gas is supplied without pressure condition monitoring, then the gas supply process is simple, but gas may leak when inside pressure exceeds outside pressure
Solution Approach 1:
The controller implements feedback control by continuously monitoring the inside pressure through the first pressure measuring instrument and adjusting the reactive gas supply accordingly. When the inside pressure exceeds the outside pressure, the controller automatically stops or prevents gas supply, creating a closed-loop control system that prevents gas leakage while maintaining simple operational procedures for the user.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach stabilizes the internal pressure of the process chamber, reducing oxide film thickness variations and preventing gas leaks, thereby enhancing substrate processing quality and consistency.
Implementation Method 1
a pump provided on the exhaust line for vacuumizing inside the process chamber
Implementation Method 2
a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber
Implementation Method 3
a first pressure-measuring instrument for measuring an inside pressure of the process chamber
Implementation Method 4
a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof
Implementation Method 5
a substrate-processing device for performing a process of a substrate including oxidization of a substrate surface of a semiconductor wafer
Data Source
AI summary
Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.