Substrate Pressure-Control Drying to Prevent Pattern Collapse
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Solution Overview
Problem
Existing substrate processing methods, such as rotary drying and supercritical drying, face challenges in preventing pattern collapse and ensuring uniform drying, especially as pattern linewidths decrease and aspect ratios increase.
Innovation Solution
A manufacturing method and substrate processing apparatus that include a pressure control operation to change the pressure above the substrate during processing, minimizing pattern collapse and ensuring uniform drying by controlling the flow of treatment solutions and gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a rotary drying process is used to remove residual cleaning solution, then drying efficiency is improved, but the risk of pattern collapse increases
Solution Approach 1:
The patent changes the pressure parameter from atmospheric to reduced pressure (vacuum) to enable effective drying without high-speed rotation. The reduced pressure facilitates evaporation and removal of cleaning solution at lower mechanical stress, preventing pattern collapse while maintaining drying efficiency.
Solution Approach 2:
The patent replaces the mechanical rotary drying system with a pressure-controlled drying system. Instead of using centrifugal force from rotation, the invention uses controlled pressure reduction to achieve drying, thereby eliminating the mechanical stress that causes pattern collapse.
2Adaptability or versatility
If the aspect ratio of patterns is increased, then device complexity is improved, but uniformity of liquid film thickness becomes more difficult to maintain
Solution Approach 1:
The patent uses pressure parameter changes to control liquid film formation and removal. By controlling the pressure during liquid treatment and drying processes, the system maintains uniform liquid film thickness even on high aspect ratio patterns, preventing defects while accommodating complex device designs.
3Productivity
If supercritical drying is used, then drying effectiveness is improved, but uniformity of drying across the substrate becomes critical and difficult to maintain
Solution Approach 1:
The patent uses controlled pressure changes to achieve uniform drying across the substrate. By carefully controlling the pressure reduction rate and maintaining appropriate pressure levels during the drying process, the system ensures uniform removal of organic solvent across the entire substrate surface, preventing localized defects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively treats substrates by reducing the risk of pattern collapse and improving drying efficiency, leading to higher quality semiconductor devices.
Implementation Method 1
a downflow unit supplying downflow to a space above the substrate
Implementation Method 2
a pressure control operation of changing a pressure of a space above the substrate
Implementation Method 3
the substrate is then supplied with supercritical drying gas (for example, carbon dioxide) to remove the residual organic solvent from the substrate
Data Source
AI summary
Disclosed is a manufacturing method including: a substrate loading operation of loading a substrate into a liquid treating chamber; a liquid treating operation of supplying a treatment solution to the substrate rotating in the liquid treating chamber through a nozzle; a substrate unloading operation of unloading the substrate from the liquid treating chamber, and a pressure control operation of changing a pressure of a space above the substrate at least one time in a period between the substrate loading operation and the substrate unloading operation.