Substrate Processing Apparatus Pressure Control via Segmented Exhaust
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Solution Overview
Problem
Existing substrate processing apparatuses face challenges in effectively controlling the temperature and pressure of substrates during film-forming processes, particularly in maintaining uniform pressure and preventing substrate displacement during gas introduction and exhaust processes.
Innovation Solution
The method involves a substrate processing apparatus with a stage, annular member, gas introduction mechanism, exhaust part, and heat transfer gas supply/exhaust part, where a heat transfer gas is introduced between the substrate and stage, and exhaust processes are managed through orifices and valves to maintain controlled pressure and temperature, ensuring uniform substrate contact and preventing displacement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If heat transfer gas is introduced into the rear surface-side space to control substrate temperature, then substrate temperature control is improved, but pressure uniformity and substrate displacement control deteriorate
Solution Approach 1:
The exhaust path is divided into two separate paths: a first exhaust path connected to the rear surface-side space and a second exhaust path connected to the main body container. This segmentation allows independent control of pressure in different regions, enabling temperature control through gas introduction while maintaining pressure uniformity through controlled exhaust operations.
Solution Approach 2:
The heat transfer gas is introduced into the rear surface-side space before the substrate processing begins. This preliminary action establishes the desired temperature condition and pressure state in advance, allowing the substrate to be processed under controlled conditions without causing displacement during the main process.
2Temperature
If heat transfer gas is supplied to control substrate temperature, then temperature control is improved, but substrate displacement during gas supply and exhaust processes worsens
Solution Approach 1:
The controller monitors the pressure and temperature conditions in the rear surface-side space and adjusts the gas supply and exhaust operations accordingly. This feedback mechanism ensures that the substrate remains stable during temperature control operations by preventing excessive pressure changes that could cause displacement.
Solution Approach 2:
The heat transfer gas is introduced into the rear surface-side space before the substrate processing begins. This preliminary action establishes the desired temperature condition and pressure state in advance, allowing the substrate to be processed under controlled conditions without causing displacement during the main process.
3Device complexity
If conventional exhaust methods are used, then process simplicity is maintained, but manufacturing precision of film formation worsens
Solution Approach 1:
The exhaust system is segmented into multiple independent paths with separate control mechanisms. This segmentation allows precise control of pressure and gas flow during different stages of the film formation process, improving manufacturing precision while maintaining manageable system complexity through modular design.
Solution Approach 2:
The controller dynamically adjusts parameters such as gas flow rate, pressure, and exhaust timing during the film formation process. These parameter changes enable precise control of the film formation conditions, improving manufacturing precision without requiring overly complex hardware.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise control of substrate processing conditions, ensuring uniform film formation and preventing substrate displacement during gas supply and exhaust processes, enhancing the efficiency and reliability of the film-forming process.
Implementation Method 1
a heat transfer gas introduction supply/exhaust part configured to supply or exhaust a heat transfer gas to or from a rear surface-side space which is a space between a rear surface of the substrate and a front surface of the stage
Implementation Method 2
introducing the gas from the gas introduction mechanism into the main body container so as to perform a process on the substrate
Implementation Method 3
an exhaust part configured to exhaust an interior of the main body container
Data Source
AI summary
A method of controlling a substrate processing apparatus that includes a stage, an annular member, a gas introduction mechanism, an exhaust part and a heat transfer gas introduction supply/exhaust part, the method including: mounting a substrate on the stage, and mounting the annular member on the substrate to press the substrate; creating a pressure of a heat transfer gas to be supplied into a space formed between a rear surface of the substrate and a front surface of the stage using the heat transfer gas supply/exhaust part; supplying the heat transfer gas into the space from the heat transfer gas supply/exhaust part; introducing the gas from the gas introduction mechanism into a container; exhausting the heat transfer gas from the space through an orifice; subsequently, exhausting the heat transfer gas from the space; and removing the annular member from the substrate.