Multi-Reactor Substrate Pressure Sequencing to Prevent Process Interference
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Solution Overview
Problem
Existing substrate processing apparatuses face interference between different processes performed in multiple reactors, which can compromise the integrity and quality of semiconductor manufacturing.
Innovation Solution
A substrate processing apparatus is designed with a first vessel and a second vessel, where the inner pressure of the first vessel is controlled to be lower than the second vessel during processing, and vice versa, using a lid and seal to manage pressure differentials and minimize process interference.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple reactors are configured to perform different processes simultaneously, then productivity is improved, but interference between processes occurs compromising manufacturing precision
Solution Approach 1:
The system segments the shared vacuum environment into isolated reactor zones by implementing individual pressure control for each reactor (first reactor and second reactor) while they share a common vacuum transfer chamber. This allows each reactor to maintain its own optimal pressure conditions independently, preventing process interference while maintaining high productivity through simultaneous operations.
Solution Approach 2:
The system dynamically changes pressure parameters independently in each reactor by controlling the first pressure and second pressure separately. The controller adjusts these pressure parameters to create pressure differentials that prevent gas flow between reactors, allowing different processes to occur simultaneously without interference while maintaining overall system productivity.
2Device complexity
If reactors share a common vacuum transfer chamber, then device complexity is reduced, but process interference occurs between reactors
Solution Approach 1:
The vacuum transfer chamber acts as an intermediary space that is isolated from the process chambers of both reactors. By maintaining the transfer chamber at a different pressure (third pressure) than the reactors, and using pressure differentials, the system prevents direct gas flow and process interference between reactors while still allowing substrate transfer through the shared chamber.
Solution Approach 2:
The system applies different pressure conditions to different locations within the shared vacuum system. Each reactor maintains its own local pressure quality (first pressure and second pressure respectively) that is optimized for its specific process, while the transfer chamber maintains a different pressure quality (third pressure). This local differentiation prevents process interference while keeping the overall device structure simple and shared.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses interference between processes, ensuring high-quality and consistent semiconductor manufacturing by maintaining controlled pressure environments in the reactors.
Implementation Method 1
controlling an inner pressure of the first vessel and an inner pressure of the second vessel such that the inner pressure of the first vessel is set to be lower than the inner pressure of the second vessel
Data Source
AI summary
There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.