Substrate Processing Apparatus Air Circulation Insulating Wall

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Solution Overview

Problem

Conventional substrate processing apparatuses face challenges in achieving high temperature recovery characteristics while minimizing power consumption, as they typically require a trade-off between temperature recovery speed and energy efficiency.

Innovation Solution

The apparatus incorporates an air circulation channel within the insulating wall, with a control unit managing air flow to optimize heat radiation and insulation, allowing for rapid temperature adjustments by circulating or distributing air based on temperature thresholds, thereby enhancing temperature recovery characteristics and reducing power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If the outer insulating layer is made thin to improve heat radiation and temperature recovery characteristics, then the temperature recovery characteristics are improved, but power consumption increases to compensate for heat radiated via the surface

Engineering Contradiction:
Improvetemperature recovery speedVSAvoidpower consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The insulating wall is segmented into multiple insulating layers with different thicknesses. The first insulating layer (closer to the reaction container) has a smaller thickness to allow heat radiation for fast cooling, while the second insulating layer (outer layer) has a larger thickness to provide insulation and reduce heat loss to the environment, thus reducing power consumption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the insulating wall have different thermal insulation properties. The inner region near the reaction container has lower insulation (thinner layer) to facilitate rapid heat dissipation, while the outer region has higher insulation (thicker layer) to prevent external heat loss, optimizing both cooling speed and energy efficiency locally.

Inventive Principle:
Principle #3Local quality

2Use of energy by moving object

If the outer insulating layer is made thick to reduce heat radiation and power consumption, then power consumption is reduced, but temperature recovery characteristics deteriorate as the semiconductor wafer cannot be rapidly cooled down

Engineering Contradiction:
Improvepower consumptionVSAvoidtemperature recovery speed
Core Design Contradiction:
Use of energy by moving objectVSSpeed

Solution Approach 1:

The insulating wall is divided into multiple layers with gradient thickness. The first insulating layer has smaller thickness to enable rapid heat radiation and fast cooling of the semiconductor wafer, while the second insulating layer has larger thickness to reduce overall heat loss to the environment, thus achieving both fast temperature recovery and low power consumption.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The insulating wall exhibits spatially varying thermal properties: the inner layer near the reaction container has lower insulation to facilitate rapid cooling, while the outer layer has higher insulation to minimize environmental heat loss, optimizing both cooling speed and energy efficiency at different locations.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables faster temperature adjustments and lower power consumption by leveraging air circulation as an additional insulating mechanism, improving temperature recovery characteristics without increasing energy usage.

Implementation Method 1

a heater (b) installed on an inner wall of the outer insulating layer (a) to heat the inside of the reaction container (c)

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Implementation Method 2

thermally processed by heating the semiconductor wafer to a predetermined temperature by the heater (b)

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

an air circulation mechanism configured to distribute air upward or downward to the air circulation channel (26)

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 4

an insulating wall (18) made of an insulating material and configured to accommodate the reaction container (12)

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Data Source

PatentUS9695511B2Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate
Publication Date: 2017.07.04 KOKUSAI DENKI KK
  • US9695511B2 patent drawing
  • US9695511B2 patent drawing
  • US9695511B2 patent drawing

AI summary

A substrate processing apparatus including a vertical reaction container; an insulating wall formed of an insulating material and including a reaction container accommodation chamber for accommodating the reaction container therein; a heater installed in an inner wall of the reception container reception chamber on the insulating wall; an air circulation channel installed vertically in a sidewall of the insulating wall; a blower for distributing air upward or downward in the air circulation channel; intake valves for communicating the air circulation channel with the air; and exhaust valves for communicating the air circulation channel with an equipment exhaust system. In a temperature elevating process and a temperature lowering process, the intake valves and the exhaust valves are switched.