Multi-Chamber Substrate Processing Apparatus for Display Panel Etching
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Solution Overview
Problem
In the manufacturing of flat panel displays, the wet etching process using metal etchants leads to increased metal ion concentration in the etchant, resulting in reduced process reliability and potential defects such as short circuits due to metal ion precipitation.
Innovation Solution
A substrate processing apparatus with multiple process chambers and tanks, where the metal ion concentration in each chemical supplied to the chambers is carefully controlled, with higher concentrations in the first chamber and progressively lower concentrations in subsequent chambers, and a system for circulating and replenishing chemicals to maintain optimal ion levels, preventing metal ion accumulation and precipitation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the accumulated process number of the etchant increases, then productivity is improved, but metal ion concentration increases causing precipitation and short circuit defects
Solution Approach 1:
The single etching process is divided into two separate etching processes with different etchants. The first etching process uses an etchant with lower metal ion concentration, and the second etching process uses a different etchant, thereby preventing metal ion accumulation and precipitation that would occur with repeated use of the same etchant.
Solution Approach 2:
The patent changes the chemical composition parameters of the etchant by using different etchants for different etching processes. This parameter change ensures that metal ion concentration does not accumulate to problematic levels, maintaining etchant effectiveness and preventing precipitation defects throughout extended production runs.
2Manufacturing precision
If metal ion concentration in etchant increases, then etching capability is maintained, but metal ions precipitate causing short circuit defects
Solution Approach 1:
The patent extracts and removes the problematic metal ions from the etching system by using a different etchant for the second etching process. This prevents metal ion precipitation that would cause short circuit defects while maintaining the necessary etching capability through appropriate chemical selection.
Solution Approach 2:
The patent introduces a different etchant as an intermediary substance for the second etching process. This intermediary etchant performs the etching function without contributing to metal ion accumulation, thereby preventing precipitation defects while maintaining etching effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents defects in metal lines and pads by maintaining low metal ion concentrations in later process stages, enhancing the reliability of the display panel manufacturing process and reducing the risk of short circuits.
Implementation Method 1
a concentration meter connected to the third tank to measure a metal ion concentration of the third chemical contained in the third tank
Implementation Method 2
a drain pipe connected to each of the first tank, the second tank, and the third tank to transfer the first to third chemicals from the first tank, the second tank, and the third tank, respectively
Data Source
AI summary
A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.