Substrate Processing Apparatus with Blocker for MRAM Oxidation
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Solution Overview
Problem
Current substrate processing technologies face challenges in effectively reducing switching current density in MRAM devices by forming a metal oxide layer on a free layer within a magnetic tunnel junction structure, particularly due to oxygen penetration during the oxidation process.
Innovation Solution
A substrate processing apparatus is designed with a chamber, substrate support, cooler, and gas injector to form a metal oxide layer on a substrate at low temperatures, using a blocker to shield the target from oxidizing gases during sputtering, thereby reducing oxygen penetration and improving switching distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a metal layer is oxidized to form a metal oxide layer on the free layer, then switching current density is reduced, but oxygen penetrates into the target during the oxidation process causing defects
Solution Approach 1:
The chamber is divided into two separate chambers by a gate: a first chamber for sputtering the metal layer and a second chamber for oxidizing the metal layer. This segmentation prevents oxygen from the oxidation chamber from penetrating into the target in the sputtering chamber, while still allowing formation of the metal oxide layer on the free layer.
Solution Approach 2:
A gate is introduced as an intermediary element that selectively divides the chamber space. The gate acts as a barrier that controls the separation between the sputtering environment and oxidation environment, preventing harmful oxygen penetration while enabling the necessary oxidation process.
2Object-affected harmful factors
If separate chambers are used for sputtering and oxidation processes, then oxygen penetration is prevented, but device complexity increases
Solution Approach 1:
While the chamber is divided into two functional zones, both the sputtering and oxidation processes are performed within a single integrated substrate processing apparatus. The gate provides a movable partition that allows the system to function as two separate chambers when needed, while maintaining a compact single-device structure.
Solution Approach 2:
The gate is designed to be movable, allowing dynamic reconfiguration of the chamber space. During sputtering, the gate positions to separate the target from oxygen; during oxidation, the gate allows oxygen access to the substrate. This dynamic adjustment enables process flexibility without requiring permanently complex chamber structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively reduces switching current density by forming a metal oxide layer on the free layer, minimizing oxygen migration and enhancing the magnetic tunnel junction structure's characteristics, while also reducing the footprint of processing chambers.
Implementation Method 1
a cooler under the substrate to cool the substrate
Implementation Method 2
a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate
Implementation Method 3
a target mount disposed on the substrate, the target mount including a target for performing a sputtering process
Implementation Method 4
a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector
Data Source
AI summary
A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.