Substrate Processing Apparatus with Segmented Plasma Buffer Chambers
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is the increased damage to substrates or films formed when raising RF power for finer design rules, leading to poor adhesion and peeling of amorphous silicon nitride films at low substrate temperatures during plasma-based processes.
Innovation Solution
A substrate processing apparatus with dual plasma generating structures and a controlled RF power distribution to reduce particle generation and substrate heating, using a pre-processing step with non-plasma activated gases to improve film adhesion, and forming films at self-decomposition temperatures or lower.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If RF power is raised to enable plasma-based processing at finer design rules, then plasma generation is improved, but substrate and film damage increases
Solution Approach 1:
The plasma generation function is segmented from the processing chamber and relocated to separate buffer chambers. Multiple buffer chambers (first, second, and third buffer chambers) are used to generate plasma independently, allowing the main processing chamber to receive activated species without direct plasma contact. This segmentation enables plasma generation at required power levels while protecting the substrate from excessive particle damage.
Solution Approach 2:
The buffer chambers act as intermediary zones between the plasma source and the substrate. Plasma is generated in the buffer chambers and then transported to the processing chamber through gas flow, allowing the activated species to reach the substrate without the harmful effects of direct plasma exposure. This intermediary approach maintains the beneficial chemical reactivity while filtering out damaging physical effects.
2Temperature
If substrate temperature is lowered to reduce thermal damage, then thermal stress is reduced, but film adhesion deteriorates
Solution Approach 1:
A pre-processing step is introduced where the substrate is exposed to processing gas before the main film formation process. This preliminary exposure prepares the substrate surface by removing contaminants and activating surface sites, thereby improving adhesion. The pre-processing is performed at low temperature using the segmented plasma approach, avoiding thermal damage while ensuring good film adhesion.
3Manufacturing precision
If plasma is used to promote chemical reaction at low substrate temperature, then reaction rate is improved, but particle generation increases causing damage
Solution Approach 1:
The plasma generation is segmented into separate buffer chambers, allowing chemical activation to occur away from the substrate. The buffer chambers generate plasma to promote chemical reactions in the gas phase, and the activated species are then transported to the processing chamber. This segmentation maintains the beneficial chemical reactivity while preventing particle damage to the substrate.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces substrate and film damage, enhances film adhesion, and allows for lower processing temperatures while maintaining sufficient plasma for film formation, addressing the issues of particle generation and adhesion at low temperatures.
Implementation Method 1
plasma-generating electrodes that activate the second processing gas in each of the buffer chambers with an application of the RF power from the power source
Implementation Method 2
a power source that outputs RF power; plasma-generating electrodes that activate the second processing gas in each of the buffer chambers with an application of the RF power from the power source
Implementation Method 3
a heating system that heats the substrate; to form a film on the metal film while heating the substrate to a self-decomposition temperature of the first processing gas or lower
Data Source
AI summary
Disclosed is a method of manufacturing a semiconductor device including: performing a pre-process to a metal film or a GST film by supplying a first processing gas to a substrate, on a surface of which the metal film or the GST film is formed, without supplying a second processing gas; and performing a formation process to the substrate to which the pre-process has been performed such that a film is formed on the metal film or the GST film by executing at least one cycle of alternately (i) supplying the first processing gas, and (ii) supplying the second processing gas that is activated by plasma excitation.